Citations with the tag: AMORPHOUS substances

Results 1 - 50

• X-ray diffraction studies of the effects of N incorporation in amorphous CNx materials.
  Walters, J.K.; Kuhn, M.; Spaeth, C.; Dooryhee, E.; Newport, R.J. // Journal of Applied Physics; 04/02/98, Vol. 83 Issue 7, p3529 

  Details the X-ray diffraction study of the effects of N incorporation in amorphous CNx materials. Observations made in study; Use of experimental data in study; Indications of the results of study; What results of study are consistent with.

• Numerical analysis of a thin microcyrstalline p layer in p-i-n a-Si:H solar cells.
  Topic, Marko; Smole, Franc; Furlan, Joze // Journal of Applied Physics; 4/15/1998, Vol. 83 Issue 8, p4518 

  Provides information on a study examination the function of a thin microcrystalline p(...c-SiH) layer in a p-i-n hydrogenated amorphous silicon (a-Si:H) based solar cell. Methodology used to conduct the study; Information on circumstances at the ZNO/p front contact heterozygosity; Detailed...

• The growth of pinhole-free epitaxial DySi2-x films on atomically clean Si(111).
  Shen, G.H.; Chen, J.C. // Journal of Applied Physics; 10/1/1998, Vol. 84 Issue 7, p3630 

  Examines the implementation of a scheme, taking into account the formation of amorphous interlayer, to grown pinhole-free DySi2-x films. Discusses the mechanism for pinhole formation; Mechanisms proposed for the formation of pinholes; Method used for determining the appropriate thickness of...

• Transport and structural modification during nitrogen implantation of hard amorphous carbon films.
  Grigull, S.; Jacob, W.; Henke, D.; Spaeth, C.; Sümmchen, L.; Sigle, W. // Journal of Applied Physics; 5/15/1998, Vol. 83 Issue 10, p5185 

  Provides information on an experiment involving the implantation of hard amorphous carbon (ta-C) films with 20 keV N+ ions with different fluences up to 6x1017/cm 2 at different substrate temperatures. Methodology used to conduct the experiment; Preparation of thin films of ta-C of typically...

• Analysis of front contact heterojunction in a-Si:H one-dimensional position sensitive detectors.
  Topic, M.; Smole, F.; Furlan, J.; Fortunato, E.; Martins, R. // Review of Scientific Instruments; Mar97, Vol. 68 Issue 3, p1377 

  Studies the influence of different transparent conducting oxides (TCO) on the transverse photoelectrical properties of one-dimensional position sensitive detectors based on p-i-n amorphous silicon structures. Poor quality of the p layer revealed by secondary ion mass spectroscopy measurements;...

• [sup 3]He immersion cell for ultralow temperature study of amorphous solids.
  Rogge, Sven; Natelson, Douglas; Osheroff, D.D. // Review of Scientific Instruments; Apr97, Vol. 68 Issue 4, p1831 

  Describes the fabrication of a [sup 3]helium immersion cell for dielectric measurements of insulating amorphous solids in a nuclear demagnetization cryostat. Temperature range at the cryostat; Direct immersion of the samples in [sup 3]helium with two exchangers per electrode; Thermometer...

• Defects in preamorphized single-crystal silicon.
  Ayres, J. R.; Brotherton, S. D.; Shannon, J. M.; Politiek, J. // Applied Physics Letters; 11/19/90, Vol. 57 Issue 21, p2214 

  Direct electrical characterization of 1-�m-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec -0.40 eV has been found associated with the amorphous-crystalline boundary...

• (001) oriented FePt�Ag composite nanogranular films on amorphous substrate.
  Kang, K.; Zhang, Z. G.; Papusoi, C.; Suzuki, T. // Applied Physics Letters; 5/12/2003, Vol. 82 Issue 19, p3284 

  By annealing the multilayer film with a stack structure of MgO 10 nm/Ag 20 nm/[FePt x nm/Ag 5 nm][SUB5] at 550�C for 1 h, (001)-oriented L 1[SUB0] FePt nanograins with high perpendicular magnetic anisotropy are obtained on an amorphous substrate. The 20-nm Ag underlayer plays an important role...

• Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb[sup 3+] phosphor.
  Richardson, H. H.; Van Patten, P. G.; Richardson, D. R.; Kordesch, M. E. // Applied Physics Letters; 3/25/2002, Vol. 80 Issue 12, p2207 

  An alternating current thin-film electroluminescent device has been constructed on a flexible polymer substrate using an amorphous AlN:Tb[sup 3+] film as the phosphor. When the device is operated at 170 Vac and at a frequency of 1 kHz, a stripe of green light can be seen emanating from the 0.6...

• Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition.
  Bray, K. R.; Gupta, A.; Parsons, G. N. // Applied Physics Letters; 4/1/2002, Vol. 80 Issue 13, p2356 

  Fractal analysis of the surface topography is used to study the effects of hydrogen dilution on the surface transport kinetics during the plasma deposition of hydrogenated amorphous silicon. Images obtained from atomic force microscopy are examined using dimensional fractal analysis, and surface...

• Evidence of chemical ordering in amorphous hydrogenated silicon carbide.
  Tafto, J.; Kampas, F. J. // Applied Physics Letters; 5/15/85, Vol. 46 Issue 10, p949 

  Amorphous Si0.68C0.32[ATOTHER]@B:[/ATOTHER] H prepared by radio frequency glow discharge from a mixture of methane and silane was studied by means of the complementary techniques of electron energy-loss spectroscopy and electron diffraction. The experimental results are consistent with Si and C...

• Amorphous transition phase of NiSi2.
  Vanderwalker, D. M. // Applied Physics Letters; 3/17/86, Vol. 48 Issue 11, p707 

  A glass transition phase forms at the Ni-Si interface as a precursor to NiSi2. The crystalline to amorphous transformation occurs when a sufficient concentration of Ni atoms is present to raise the elastic energy of crystalline Si and lower the energy barrier to the reaction. NiSi2 crystals...

• Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon.
  Bhattacharya, E.; Pankove, J. I.; Deb, S. K. // Applied Physics Letters; 9/28/87, Vol. 51 Issue 13, p998 

  In this letter we investigate the difference between the bond breaking and the charge trapping model of the light-induced effect in amorphous hydrogenated silicon (a-Si:H). We also report the partial recovery from the light-induced effect in p-i-n solar cells by infrared illumination in the...

• Amorphous GdCo: Effect of surface segregation on reading of the magnetization by spin-polarized photoemission.
  Bona, G. L.; Meier, F.; Siegmann, H. C.; Gambino, R. F. // Applied Physics Letters; 1/25/88, Vol. 52 Issue 4, p334 

  Spin-polarized photoemission can be used to read the surface magnetization direction of perpendicularly magnetized amorphous GdCo films. Effects specific of the photoemission process are observed: (1) surface depolarization by disordered Gd moments in the outermost segregated layers of the film,...

• Response to ��Comment on �Photodegradation in hydrogenated amorphous silicon films at a high level of illumination� �� [Appl. Phys. Lett. 53, 1768 (1988)].
  Eser, E.; Urbanski, E. // Applied Physics Letters; 10/31/88, Vol. 53 Issue 18, p1769 

  Responds to a comment on the authors' article about the photodegradation in hydrogenated amorphous silicon films at a high level of illumination, published in a 1988 issue of 'Applied Physics Letters.' Normalized photoresistance of the sample; Different degradation mechanisms operating in the...

• Electroluminescence in diamond-like carbon films.
  Kim, S. B.; Wager, J. F. // Applied Physics Letters; 11/7/88, Vol. 53 Issue 19, p1880 

  White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. ac voltages in excess of 200 V were applied to a metal-insulator-semiconductor (i.e., DLC)-insulator-metal device structure to observe EL. At an applied voltage of 235 V, the...

• Strain dependence of p-i-n hydrogenated amorphous silicon junctions.
  Utsunomiya, Michito; Yoshida, Akira // Applied Physics Letters; 12/5/88, Vol. 53 Issue 23, p2296 

  The effects of mechanical strain on the electrical properties of p-i-n hydrogenated amorphous silicon junction devices were investigated. When strain was applied parallel to the junction plane, both the forward and reverse currents increased with increasing compressive strain and decreased with...

• Reinterpretation of degradation kinetics of amorphous silicon.
  Redfield, David; Bube, Richard H. // Applied Physics Letters; 3/13/89, Vol. 54 Issue 11, p1037 

  Generation of light-induced metastable defects in amorphous Si:H(a-Si:H) is shown to follow the same stretched exponential (SE) that describes relaxation of thermally induced metastability at room temperature for a simple case. Apparent power laws derived from the central part of the SE are...

• Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress.
  Nakatani, K.; Ogasawara, M.; Suzuki, K.; Okaniwa, H.; Hamamoto, K.; Ozaki, H. // Applied Physics Letters; 4/24/89, Vol. 54 Issue 17, p1678 

  The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a...

• Observation of light-induced defect formation in hydrogenated amorphous silicon by subgap illumination.
  Skumanich, Andrew; Fathallah, Mohamed; Amer, Nabil M. // Applied Physics Letters; 5/8/89, Vol. 54 Issue 19, p1887 

  The effect of subgap illumination on the formation of light-induced defects in hydrogenated amorphous silicon was investigated using photothermal deflection spectroscopy. As with broadband illumination, an enhancement in the subgap absorption is observed and is related to the silicon dangling...

• Photoselection of Impurity Molecules in Amorphous Media over the Zero-Phonon Linewidth.
  Svishchev, G. M. // Optics & Spectroscopy; Aug2001, Vol. 91 Issue 2, p219 

  The shape of a multiwell hole, which is produced upon burning a number of closely spaced equidistant spectral holes in the low-temperature absorption spectrum of an impurity amorphous solid, is studied. When the bottom of such a hole is probed by the wavelength-modulated light, the transmission...

• Glassy alloys for injection molding.
  Teresko, John // Industry Week/IW; 03/03/97, Vol. 246 Issue 5, p35 

  Reports on developments that could eventually make possible the use of amorphous metals in bulk forms. Limits of current metal processing methods; Research efforts by scientists at Los Alamos National Laboratory, Los Alamos, N.M.

• Initial stages in the decay of the amorphous phase in the bulk metallic glass Zr�Cu�Ti.
  Abrosimova, G. E.; Aronin, A. S.; Gurov, A. F.; Kir�yanov, Yu. V.; Molokanov, V. V. // Physics of the Solid State; Jul99, Vol. 41 Issue 7, p1027 

  Using methods of x-ray diffraction analysis, differential scanning calorimetry, dilatometry, and transmission electron microscopy, we have investigated the initial stages of decay of the amorphous phase in a bulk metallic glass based on zirconium. We found that crystallization of the bulk...

• The structure of copper-doped amorphous hydrogenated carbon films.
  Vasilevskaya, T. N.; Andreev, N. S.; Drozdova, I. A.; Filipovich, V. N.; Yastrebov, S. G.; Zvonareva, T. K. // Physics of the Solid State; Nov99, Vol. 41 Issue 11, p1918 

  A study of the nanostructure of a-C:H:Cu films by x-ray small-angle scattering, x-ray diffraction, TEM, and visible and UV spectroscopy is reported. It has been established that introduction of 9-16 at. % Cu not only decorates the original carbon fragments but produces extended (up to 4/�m in...

• Electron Transport in the Carbon�Copper Nanocluster Structure.
  Lutsev, L. V.; Yakovlev, S. V.; Siklitskii, V. I. // Physics of the Solid State; Jun2000, Vol. 42 Issue 6, p1139 

  The electron transport in hydrogenated amorphous carbon films a-C : H with copper nanocluster inclusions has been investigated. The conditions of cluster formation are derived. It is theoretically demonstrated that the energy band structure of the matrix substantially affects the conditions of...

• A New Type of Magnetoplastic Effects in Linear Amorphous Polymers.
  Golovin, Yu. I.; Morgunov, R. B. // Physics of the Solid State; May2001, Vol. 43 Issue 5, p859 

  A new type of magnetoplastic effects in polymers is revealed. This effect cannot be explained by the reorientation of macromolecular units that possess a magnetic susceptibility anisotropy. It is shown that the joint action of magnetic and electric fields and the rotational mobility of side...

• A High-Modulus Metastable Phase in Mg�Ni�Y Alloys.
  Kobelev, N. P.; Soifer, Ya. M.; Abrosimova, G. E.; Brodova, I. G.; Manukhin, A. N. // Physics of the Solid State; Oct2001, Vol. 43 Issue 10, p1807 

  The evolution of the elastic properties and the character of the structural changes occurring during the crystallization of amorphous Mg-Ni-Y alloys are investigated. The process of crystallization is shown to proceed in two stages with formation of an intermediate metastable phase at the first...

• X-ray Diffraction Determination of Easiest Slip Planes in Amorphous�Crystalline Polymers.
  Ginzburg, B. M.; Sultanov, N. // Technical Physics; Feb2001, Vol. 46 Issue 2, p258 

  A simple X-ray diffraction technique for determining the easiest slip planes in amorphous-crystalline polymer grains is suggested. The efficiency of the technique was demonstrated with polyethylene and polyamide-6.

• Magnetoimpedance Effect in FeCoMoSiB Amorphous Sheets.
  Anashko, A. A.; Semirov, A. V.; Gavrilyuk, A. A. // Technical Physics; Apr2003, Vol. 48 Issue 4, p427 

  The magnetoimpedance effect in sheets made of Fe[sub 4]Co[sub 67]Mo[sub 1.5]Si[sub 16.5]B[sub 11] amorphous metallic alloy is studied in relation to the mutual orientations of the sheet axis, permanent magnetic field, and variable electrical current. Also, the effective permeability is studied...

• Analysis of the fundamental absorption edge in amorphous hydrogenated carbon films.
  Vasin, A. V.; Matveeva, L. A.; Kutsai, A. M. // Technical Physics Letters; Dec99, Vol. 25 Issue 12, p1006 

  Optical spectroscopy was used to study the high-energy region of the fundamental absorption edge in films of amorphous hydrogenated carbon obtained for various deposition parameters. The slope of the absorption edge was analyzed using the slope of the linear Tauc dependence. The results of the...

• The Structure of Granular Amorphous Carbon Films with Cobalt Nanoparticles.
  Siklitskii, V. I.; Lutsev, L. V.; Baidakova, M. V. // Technical Physics Letters; Apr2002, Vol. 28 Issue 4, p283 

  The films of amorphous hydrogenated carbon containing cobalt nanoparticles are studied by small-angle X-ray scattering (SAXS). The SAXS pattern structure reveals the presence of two types of scattering centers, one of which represents cobalt particles. It is suggested that the second type of...

• Optical properties of amorphous silicon and silicon dioxide.
  Ravindra, N. M.; Narayan, J. // Journal of Applied Physics; 8/1/86, Vol. 60 Issue 3, p1139 

  Focuses on a study which examined the optical properties of amorphous silicon. Experimental details; Results and discussion; Summary and conclusion.

• A study of initial transient phenomena in the chemical vapor deposition process using silane plasma.
  Nakayama, Yoshikazu; Ohtsuchi, Tetsuro; Kawamura, Takao // Journal of Applied Physics; 8/1/87, Vol. 62 Issue 3, p1022 

  Studies the initial transient phenomena in the plasma deposition of hydrogenated amorphous silicon (Si) film from SiH[sub4] in terms of an origin and an influence on device fabrication. System used to apply optical emission spectroscopy; Origin of the initial transient state; Influence of the...

• Ultrasonic study of mechanically alloyed amorphous PdSiCu.
  Hikata, A.; McKenna, M. J.; Elbaum, C. // Journal of Applied Physics; 3/15/88, Vol. 63 Issue 6, p1910 

  Presents information on study which examined the mechanical alloying of amorphous Pd[sub0.775]Si[sub0.165]Cu[sub0.060]. Feature of the amorphous materials; Sample preparation and experiments; Results and discussion; Conclusions.

• On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon.
  Irrera, Fernanda // Journal of Applied Physics; 2/1/94, Vol. 75 Issue 3, p1396 

  Presents a study that investigated the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon. Details of the experiment; Model and discussion; Conclusions.

• An alternative degradation method for amorphous hydrogenated silicon: The constant degradation method.
  Brandt, Martin S.; Stutzmann, Martin // Journal of Applied Physics; 3/1/94, Vol. 75 Issue 5, p2507 

  Introduces the Constant Degradation Method (CDM) as an experimental scheme to study the kinetics of metastable defect creation in amorphous hydrogenated silicon. Information on amorphous hydrogenated silicon; Kinetic theories for defect creation; Increase in light intensity needed to keep the...

• Depletion layer width in undoped a-Si:H Schottky barrier revealed by reverse bias photocurrent.
  Maeda, Keiji; Chiyoda, Wataru; Umezu, Ikurou; Kuroe, Atsushi // Journal of Applied Physics; 4/1/94, Vol. 75 Issue 7, p3522 

  Presents a study that investigated reverse bias photocurrent of undoped hydrogenated amorphous silicon Schottky barrier under excitation with uniformly absorbed light. Description of sample preparation and method of measurements; Analysis of conditions of deep depletion; Details on voltage...

• Rapid decompression of seeded melts for materials processing.
  Ning Qiu; Apfel, Robert E. // Review of Scientific Instruments; May95, Vol. 66 Issue 5, p3337 

  Investigates a novel processing approach and experimental design to achieve as-cast bulk amorphous materials. Sudden vaporization of liquid drops dispersed in molten metal near its melting temperature; Foam processing; Influence of the water/p-terphenyl mass mixing ratio; Influence of stirring...

• Nature of the transformations of ice I and low-density amorphous ice to high-density amorphous ice.
  Floriano, M. A.; Handa, Y. P.; Klug, D. D.; Whalley, Edward // Journal of Chemical Physics; 12/1/89, Vol. 91 Issue 11, p7187 

  The changes of enthalpy at the irreversible transformation of high-density amorphous ice to low-density amorphous ice and of low-density amorphous ice to ice Ih have been measured in a Tian�Calvet heat-flow calorimeter. The equilibrium pressures of the two transformations have been estimated...

• Metastability and relaxation processes in hydrogenated amorphous silicon.
  Budaguan, B. G.; Aivazov, A. A.; Meitin, M. N.; Sazonov, A. Yu.; Berdnikov, A. E.; Popov, A. A. // Semiconductors; Dec97, Vol. 31 Issue 12, p1252 

  The kinetics of structural relaxation in hydrogenated amorphous silicon (a-Si:H) deposited by various methods is investigated by differential scanning calorimetry. The experimental results are used to analyze the nature of the metastable states in a-Si:H and to investigate the relationship...

• Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon.
  Kougia, K. V.; Terukov, E. I.; Fus, V. // Semiconductors; Oct98, Vol. 32 Issue 10, p1131 

  A model of the decay kinetics of photoconductivity in amorphous hydrogenated silicon, in which recombination of excess carriers is assumed to occur via tunnelling, is proposed. It is shown that study of the decay shape after flash illumination can be a very effective way to detect structural...

• Frequency-resolved photocurrent studies of a-Se.
  Kaplan, R. // Applied Physics A: Materials Science & Processing; 1997, Vol. 64 Issue 2, p171 

  Optically modulated photocurrent response of amorphous selenium (a-Se) thin films was measured between 20 K and 295 K, by using the in-quadrature frequency-resolved spectroscopy method. The results show that the modulated photocurrent depends on external parameters such as excitation light...

• Silicon nanowires grown from Au-coated Si substrate.
  Xing, Y.J.; Yu, D.P.; Xi, Z.H.; Xue, Z.Q. // Applied Physics A: Materials Science & Processing; 2003, Vol. 76 Issue 4, p551 

  Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 �C under an H[sub 2] atmosphere. The nanowires have a length of several tens of a micron and a diameter of 10�20 nm. The growth mechanism of the nanowires was investigated and explained with a...

• Positive Hall effect in a transition-metal-free amorphous alloy.
  Kuzmenko, V.M.; Melnikov, V.I. // Low Temperature Physics; Mar1997, Vol. 23 Issue 3, p264 

  Investigates the Hall effect of homogeneous amorphous beryllium (Be) films stabilized with hydrogen impurity. Independence of the estimated value of the Hall coefficient of temperature and sample thickness; Contradiction of observed effect to predictions of the theory that the Hall effect in...

• Rotational echo in amorphous ferromagnets.
  Kakabadze, G. R.; Chotorlishvili, L. L. // Low Temperature Physics; Jan2000, Vol. 26 Issue 1 

  The rotational echo in amorphous ferromagnets is investigated. It is conjectured that amorphous ferromagnets contain a group of molecules having a dipole moment, and the change in the orientation of these molecules gives rise to oscillations of the echo signal. The transverse relaxation time...

• Crystalline and amorphous polymeric solid nitrogen.
  Yakub, L.N. // Low Temperature Physics; Sep/Oct2003, Vol. 29 Issue 9/10, p780 

  The structure and thermodynamic functions of solid high-density nonmolecular nitrogen in the crystalline and amorphous phases are studied by a Monte Carlo simulation technique on the basis of the potential model proposed earlier for the cubic gauche polymeric crystal. The solid amorphous state...

• Electron Subsystem Superheating as a Cause of Nonlinear Current�Voltage Characteristics of Amorphous InO[sub x] Films.
  Golubkov, M. V.; Tsydynzhapov, G. �. // JETP Letters; 6/25/2000, Vol. 71 Issue 12, p516 

  Current�voltage characteristics of amorphous InO[sub x] films in the region of the magnetic-field-induced superconductor�insulator transition were examined. The characteristics are shown to be nonlinear above the critical field because of the superheating of charge carriers in the lattice....

• Densification of amorphous silicon prepared by hydrogen-ion-beam-assisted evaporation.
  Rinnert, H.; Vergnat, M.; Marchal, G.; Burneau, A. // Applied Physics Letters; 9/9/96, Vol. 69 Issue 11, p1582 

  Hydrogenated amorphous silicon films were deposited by ion-beam-assisted evaporation onto substrates maintained at 120 �C. The influence of the substrate bias was studied. By combined infrared spectrometry and thermal desorption spectrometry experiments, it is inferred that the bombardment of...

• Modeling of the depletion of the amorphous-silicon surface during hemispherical grained silicon formation.
  Sallese, J. M.; Ils, A.; Bouvet, D.; Fazan, P.; Merritt, Chris // Journal of Applied Physics; 11/15/2000, Vol. 88 Issue 10 

  A model, based on surface energy minimization under nonequilibrium conditions, is presented to describe the evolution of the amorphous silicon (a-Si) topography near the hemispherical grained silicon. The evolution of the depletion area can be explained by a combination between capture of...

• Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy.
  Toyoshima, Yasutake; Arai, Kazuo; Matsuda, Akihisa; Tanaka, Kazunobu // Applied Physics Letters; 4/16/90, Vol. 56 Issue 16, p1540 

  The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1�3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra....

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