TITLE

Renesas doubles gate structure in sub-45-nm transistors

AUTHOR(S)
Taylor, Colleen
PUB. DATE
June 2007
SOURCE
Electronic News;6/18/2007, Vol. 53 Issue 25, p31
SOURCE TYPE
Trade Publication
DOC. TYPE
Product Review
ABSTRACT
The article features the high-performance transistor technology by Renesas Technology Corp., announced at the VLSI Symposium in Kyoto, Japan.
ACCESSION #
25534251

 

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