Erratum: Epitaxial alignment of arsenic-implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]

Hoyt, J. L.; Crabbé, E.; Gibbons, J. F.; Pease, R. F. W.
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1846
Academic Journal
Presents a correction of an error made in the article on the epitaxial alignment of arsenic-implanted polycrystalline semiconductor silicon films.


Related Articles

  • p-type CdTe epilayers grown by photoassisted molecular beam epitaxy. Bicknell, R. N.; Giles, N. C.; Schetzina, J. F. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1735 

    We report the first successful substitutional doping of CdTe films with antimony. These p-type epilayers were prepared using a new technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. Illumination was found to produce...

  • Scaling size distribution of oxide defects, trema-fractal oxide layer, and breakdown statistics of metal-oxide-semiconductor devices. Yadava, R. D. S. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p834 

    The extreme value distribution, characteristic of the defect-related dielectric breakdown in thin SiO2 films, is derived by assuming that (i) the defects are Poisson distributed in space with their mean densities scaling with their sizes as D(a)∼a-γ, where D(a) is the total density of...

  • Photoluminescence properties of erbium-doped single-crystal and porous silicon films. Orlov, L. K.; Ivin, S. V.; Shengurov, D. V.; Shteınman, É. A. // Technical Physics Letters;May99, Vol. 25 Issue 5, p393 

    The features of the photoluminescence spectra of single-crystal and porous Si:Er films grown by molecular beam epitaxy are discussed.

  • Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates. Buzynin, Yu. N.; Gusev, S. A.; Danil�tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Murel�, A. V.; Khrykin, O. I.; Shashkin, V. I. // Technical Physics Letters;Apr2000, Vol. 26 Issue 4, p298 

    Conditions for the growth of single-crystalline GaAs, AlGaAs, and InGaAs layers by metalorganic VPE were established and the corresponding semiconductor films were obtained on porous GaAs substrates. Comparative data on the morphology, structure, and electrical homogeneity of the epitaxial...

  • New conducting polymers join polyacetylene.  // Physics Today;Sep79, Vol. 32 Issue 9, p19 

    Reports the progress made in the research of organic polymers. Information on the polymer polyacetylene; Study of the band gap of undoped films; Creation of substituted film-forming polyacetylene variants.

  • Macroscopic ion traps at the silicon-oxide interface. Dmitriev, S. G.; Markin, Yu. V. // Semiconductors;Dec98, Vol. 32 Issue 12, p1284 

    The drift kinetics of the mobile charge in SiO[sub 2] films, its capture on ion traps localized at the SiSiO[sub 2] interface, and ion emission from these traps are investigated by measuring the capacitance-voltage characteristics, the dynamic current-voltage characteristics, and the thermally...

  • Investigating the photosensitivity spectra of n-type GaAs�As[sub 2]Se[sub 3] heterojunctions. Arzhanukhina, I. P.; Kornev, K. P.; Seleznev, U. V. // Semiconductors;Jan1999, Vol. 33 Issue 1, p56 

    The spectral photoresponse characteristics of heterojunctions made with n-type GaAs and amorphous films of As[sub 2]Se[sub 3] are investigated for various thicknesses of the chalcogenide-glass semiconductor film. Expressions are obtained for calculating the following quantities: the fraction of...

  • Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper. Golubok, A. O.; Gorbenko, O. M.; Zvonareva, T. K.; Masalov, S. A.; Rozanov, V. V.; Yastrebov, S. G.; Ivanov-Omskii, V. I. // Semiconductors;Feb2000, Vol. 34 Issue 2, p217 

    The results of experimental studies of the copper-doped hydrogenated amorphous carbon films by scanning tunneling microscopy and spectroscopy are reported. These results are indicative of the effect of spatial ordering of nanostructures in thin films based on carbon and copper. Geometric...

  • The Effect of Ultrafast Low-Temperature Doping of Vitreous As�Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect). Korzhuev, M. A. // Semiconductors;Feb2000, Vol. 34 Issue 2, p213 

    The effect of ultrafast doping of chalcogenide vitreous As-Se, Ge-Se, and other films with Cu, Ag, Au, Cr, and other metals previously discovered in metal/chalcogenide vitreous film heterostructures at 250-350 K is analyzed.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics