TITLE

Erratum: Epitaxial alignment of arsenic-implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]

AUTHOR(S)
Hoyt, J. L.; Crabbé, E.; Gibbons, J. F.; Pease, R. F. W.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1846
SOURCE TYPE
Academic Journal
DOC. TYPE
Erratum
ABSTRACT
Presents a correction of an error made in the article on the epitaxial alignment of arsenic-implanted polycrystalline semiconductor silicon films.
ACCESSION #
9823319

 

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