Erratum: Epitaxial alignment of arsenic-implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]

Hoyt, J. L.; Crabbé, E.; Gibbons, J. F.; Pease, R. F. W.
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1846
Academic Journal
Presents a correction of an error made in the article on the epitaxial alignment of arsenic-implanted polycrystalline semiconductor silicon films.


Related Articles

  • Photoluminescence properties of erbium-doped single-crystal and porous silicon films. Orlov, L. K.; Ivin, S. V.; Shengurov, D. V.; Shteınman, É. A. // Technical Physics Letters;May99, Vol. 25 Issue 5, p393 

    The features of the photoluminescence spectra of single-crystal and porous Si:Er films grown by molecular beam epitaxy are discussed.

  • Single-Crystalline GaAs, AlGaAs, and InGaAs Layers Grown by Metalorganic VPE on Porous GaAs Substrates. Buzynin, Yu. N.; Gusev, S. A.; Danil’tsev, V. M.; Drozdov, M. N.; Drozdov, Yu. N.; Murel’, A. V.; Khrykin, O. I.; Shashkin, V. I. // Technical Physics Letters;Apr2000, Vol. 26 Issue 4, p298 

    Conditions for the growth of single-crystalline GaAs, AlGaAs, and InGaAs layers by metalorganic VPE were established and the corresponding semiconductor films were obtained on porous GaAs substrates. Comparative data on the morphology, structure, and electrical homogeneity of the epitaxial...

  • Macroscopic ion traps at the silicon-oxide interface. Dmitriev, S. G.; Markin, Yu. V. // Semiconductors;Dec98, Vol. 32 Issue 12, p1284 

    The drift kinetics of the mobile charge in SiO[sub 2] films, its capture on ion traps localized at the SiSiO[sub 2] interface, and ion emission from these traps are investigated by measuring the capacitance-voltage characteristics, the dynamic current-voltage characteristics, and the thermally...

  • Investigating the photosensitivity spectra of n-type GaAs–As[sub 2]Se[sub 3] heterojunctions. Arzhanukhina, I. P.; Kornev, K. P.; Seleznev, U. V. // Semiconductors;Jan1999, Vol. 33 Issue 1, p56 

    The spectral photoresponse characteristics of heterojunctions made with n-type GaAs and amorphous films of As[sub 2]Se[sub 3] are investigated for various thicknesses of the chalcogenide-glass semiconductor film. Expressions are obtained for calculating the following quantities: the fraction of...

  • Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper. Golubok, A. O.; Gorbenko, O. M.; Zvonareva, T. K.; Masalov, S. A.; Rozanov, V. V.; Yastrebov, S. G.; Ivanov-Omskiı, V. I. // Semiconductors;Feb2000, Vol. 34 Issue 2, p217 

    The results of experimental studies of the copper-doped hydrogenated amorphous carbon films by scanning tunneling microscopy and spectroscopy are reported. These results are indicative of the effect of spatial ordering of nanostructures in thin films based on carbon and copper. Geometric...

  • The Effect of Ultrafast Low-Temperature Doping of Vitreous As–Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect). Korzhuev, M. A. // Semiconductors;Feb2000, Vol. 34 Issue 2, p213 

    The effect of ultrafast doping of chalcogenide vitreous As-Se, Ge-Se, and other films with Cu, Ag, Au, Cr, and other metals previously discovered in metal/chalcogenide vitreous film heterostructures at 250-350 K is analyzed.

  • Silicon Network in a-Si:H Films Containing Ordered Inclusions. Golikova, O. A.; Bogdanova, E. V.; Kazanin, M. M.; Kuznetsov, A. N.; Terekhov, V. A.; Kashkarov, V. M.; Ostapenko, O. V. // Semiconductors;May2001, Vol. 35 Issue 5, p579 

    a-Si:H films with inclusions of (SiH[sub 2])[sub n] clusters or Si nanocrystals have been grown by magnetronassisted SiH[sub 4] decomposition (dc-MASD). The films were characterized by the microstructural parameter R = 0.7-1.0. Ultrasoft X-ray emission spectroscopy was applied to establish the...

  • Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers. Akimov, B. A.; Bogoyavlenskiı, V. A.; Ryabova, L. I.; Vasil’kov, V. N. // Semiconductors;May2001, Vol. 35 Issue 5, p502 

    Photoconductivity and transient processes in thin (0.2-0.3 μm) n-PbTe:Ga epilayers were studied. The films were grown by the hot-wall technique on BaF[sub 2] 〈111〉 substrates. Photoelectric properties of the samples were investigated in the temperature range from 4.2 to 300 K. A...

  • Effect of Illumination on the Rate of Relaxation of Light-induced Metastable States in a-Si:H(B). Kurova, I. A.; Ormont, N. N.; Gromadin, A. L. // Semiconductors;Jun2003, Vol. 37 Issue 6, p727 

    Time dependences of the rates of relaxation of light-induced metastable states of electrically active impurity atoms in boron-doped a-Si:H films have been studied in the dark and under illumination. It has been established that under illumination the rate of relaxation of light-induced...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics