TITLE

Comment on “Stimulated emission from trap electronic states in oxide of nanocrystal Si” [Appl. Phys. Lett. 92, 221910 (2008)]

AUTHOR(S)
Valenta, Jan; Pelant, Ivan
PUB. DATE
August 2008
SOURCE
Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p066101
SOURCE TYPE
Academic Journal
DOC. TYPE
Editorial
ABSTRACT
The authors present their views and analysis regarding the article "Stimulated emission from the trap electronic states in oxide of nanocrystal Si." They comment on the model proposed by the authors and argue on their claim that the stimulated emission comes from the nanostructures on porous silicon which can produce a good coherent emission. Furthermore, they suggest that the authors must present some of the typical features of stimulated emission to prove their interpretation.
ACCESSION #
34000045

 

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