TITLE

Miniaturization–not just a matter of size

AUTHOR(S)
Geschke, Oliver
PUB. DATE
September 2006
SOURCE
Analytical & Bioanalytical Chemistry;Sep2006, Vol. 385 Issue 8, p1350
SOURCE TYPE
Academic Journal
DOC. TYPE
Editorial
ABSTRACT
Focuses on the miniaturized analysis system in chemistry. Benefits of miniaturized analysis in terms of cost of a system or cost per analysis; Disadvantages of silicon technology; Other materials that can be used in miniaturized system.
ACCESSION #
21857575

 

Related Articles

  • Modern Equipment Sets for Production of Demineralized and Deionized Water. Tiyarov, M. A.; Konstantinova, N. A.; Sharov, Yu. V.; Sobolev, G. V. // Chemical & Petroleum Engineering;Jul/Aug2004, Vol. 40 Issue 7/8, p379 

    Focuses on modern equipment sets for production of demineralized and deionized water. Removal of the ions of dissolved salts and organic compounds; Typical pressure on reverse osmosis systems.

  • Onyxâ„¢ C18 Monolith Columns for Faster HPLC Separations. Waite, Scott; Kallury, Krishna; McGinley, Michael // LC-GC Europe;Mar2005 Supplement, Vol. 18, p46 

    The article reports that Onyx C18 is a new monolithic reversed-phase media that allows for fast separations with low column backpressure. Onyx allows for flow-rates up to 9 ml/min to decrease run times without significant loss in efficiency. Silica monoliths, such as Onyx, offer a unique...

  • Terahertz emission of population-inverted hot-holes in single-crystalline silicon. Bru¨ndermann, E.; Haller, E. E.; Muravjov, A. V. // Applied Physics Letters;8/10/1998, Vol. 73 Issue 6, p723 

    We report THz emission of hot-holes in p-type silicon doped with a boron acceptor concentration of N[sub A]=1.5×10[sup 15] cm[sup -3]. We apply crossed electric (E) and magnetic (B) fields to the crystal cooled to liquid helium temperature. Optical gain is found for field ratios E/B in the...

  • Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field... Zhang, Yifei; Singh, Jasprit // Journal of Applied Physics;4/15/1998, Vol. 83 Issue 8, p4264 

    Provides information on the results of a numerical formalism developed to address the band structure and charge control problem in n- and p-type silicon and silicon-germanium metal-oxide-semiconductor field effect transistors. Information on the modeling formalism; Detailed information on...

  • Pore formation on the silicon-metal interface in silicon-on-insulator structures. Akimov, A.G.; Barabanenkov, M. Yu; Mordkovich, V.N. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7625 

    Provides information on an experiment aimed at explaining the pore formation on the silicon-metal interface in silicon-on-insulator structure and to propose a metallization technique which allows one to avoid this effect. Methodology used to conduct the experiment; Etching of the silicon...

  • Pulsed Fowler-Nordheim current stress resistance of Si oxynitride grown with helicon-wave excited... Okamoto, Yoshinaga; Kimura, Shinjiro; Oka, Fumihito; Tsuchiya, Shigehiro; Ikoma, Hideaki // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7685 

    Provides information on an experiment which investigated pulsed Fowler-Nordheim (FN) current stress resistance for the silicon (Si) oxynitride grown in the helicon-wave excited N2-Ar plasma. Methodology used to conduct the experiment on AR ion etching effect; Information on oxynitridation of Si...

  • Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced... Costa, J.; Roura, P.; Bertran, E.; Morante, J.R. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7879 

    Provides information on an experiment which investigated the blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition. Methodology used to conduct the experiment; Information on steady-state intensity dependence on laser power;...

  • Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source. Kim, Keunjoo; Suh, M. S.; Kim, T S.; Youn, C. J.; Suh, E. K.; Shin, Y. J.; Lee, K. B.; Lee, H. J.; An, M. H.; Ryu, H. // Applied Physics Letters;12/16/1996, Vol. 69 Issue 25, p3908 

    Highly split, visible light emissions at room temperature were observed in the range from 335 to 650 nm in silicon-rich oxide films deposited in the plasma phase of a mixture of silane and oxygen. The mechanism of the light emissions is classified into two categories. The photoluminescence bands...

  • Stress relaxation in Si-rich silicon nitride thin films. Habermehl, S. // Journal of Applied Physics;5/1/1998, Vol. 83 Issue 9, p4672 

    Presents a study to develop and understand the origins of compositionally induced stress relaxation in Si-rich silicon nitrides. Methodology used to conduct study; Indication of findings; Discussion on results.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics