TITLE

Immersion and polarization

AUTHOR(S)
Levenson, M. David
PUB. DATE
August 2003
SOURCE
Microlithography World;Aug2003, Vol. 12 Issue 3, p20
SOURCE TYPE
Trade Publication
DOC. TYPE
Editorial
ABSTRACT
Editorial. Discusses the need to control polarization to maximize the potential of immersion lithography. Background on the function of photoresists in semiconductor manufacturing; Role of resist-surface reaction in liquid immersion lithography; Concerns over the effect of incompatible technologies on optical lithography.
ACCESSION #
10528296

 

Related Articles

  • A simple process to generate deeply modulated and large dimension submicron gratings on reflecting surfaces. Chi, Wei Dong; Carton, Michel; Paraire, Nicole // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2229 

    Presents a study that investigated the characteristics of the interference induced standing-wave effect which appears in a photoresist layer deposited on a reflecting surface. Information on submicrometer period gratings etched on semiconductor substrates; Application of the lithographic...

  • Exploring the needs and tradeoffs for immersion resist topcoating. Slezak, Mark; Zhi Liu; Hung, Raymond // Solid State Technology;Jul2004, Vol. 47 Issue 7, p91 

    Examines the practical issues associated with using a topcoat materials. Proposal of immersion lithography as the bridge to extent lithography to the node; Feasibility of immersion lithography; Impact of resist component leaching on the resist profile and process window.

  • Semiconductors develop an EUV ecosystem. CHATTERJEE, PALLAB // EDN;9/8/2011, Vol. 56 Issue 17, p24 

    The author explores the development of an extreme-ultraviolet (EUV) ecosystem by semiconductors in the U.S. One of the factors cited by the author driving small geometries despite the rising cost of building wafer fabs is lithography. He notes, however, that the shift to EUV lithography requires...

  • A Novel Wafer-plane Dosimeter for EUV Lithography. Grantham, Steven; Tarrio, Charles // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p354 

    Extreme Ultraviolet Lithography (EUVL) incorporates 13.5 nm light for patterning wafers and requires in-situ wafer-plane dosimetry that can be tailored to the requirements of an EUVL stepper’s environment. There are several types of detectors that are sensitive to EUV radiation including...

  • Sub-diffraction-limited patterning using evanescent near-field optical lithography. Alkaisi, M. M.; Blaikie, R. J. // Applied Physics Letters;11/29/1999, Vol. 75 Issue 22, p3560 

    Studies sub-diffraction-limited patterning using evanescent near-field optical lithography. Employment of ultrathin photoresist layers in conjunction with conformable photomasks; Polarization for the grating structures.

  • Planar thin film YBa2Cu3O7-δ Josephson junction pairs and arrays via nanolithography and ion damage. Chen, Ke; Cybart, Shane A.; Dynes, R. C. // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2863 

    We have fabricated in-plane high-Tc Josephson junction pairs and series arrays using our established nanolithography and ion damage process. Junctions in a pair showed nearly identical electrical properties. The ten-junction array exhibited current–voltage characteristics that can be...

  • Enhanced efficiency of CdMgZnSe down-converted light emitting diodes using light extraction features fabricated by laser-speckle lithography. Yang, Zhaohui H.; Haase, Michael A.; Leatherdale, Catherine A.; Smith, Terry L. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 12, p123106 

    We report a method of making a wavelength converted, light-emitting diode (LED) having light extraction features based on coherent speckle patterns. These patterns have random feature size, random feature distribution, and random feature shape. The features were produced using a maskless...

  • Simulation is essential to successful design of modern semiconductors. Erdman, Andreas // Laser Focus World;Mar2004, Vol. 40 Issue 3, p61 

    Focuses on the importance of lithography simulation in designing semiconductors. Software for lithography; Modifications of the photoresist; Simulation flow of a lithography process.

  • Double-patterning, topcoat-less photoresists and silicon hard masks. Slezak, Mark; Osborn, Brian // Solid State Technology;Aug/Sep2011, Vol. 54 Issue 8, p14 

    The article discusses the techniques of double-patterning in photolithography and the innovation of extreme ultraviolet (EUV) lithography at the semiconductor industry in the U.S. It tackles the various patterning steps which include the methods of double exposure, dual-tone resists and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics