TITLE

Erratum: Low-temperature epitaxial growth of silicon by low-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1053 (1988)]

AUTHOR(S)
Meakin, D.; Stobbs, M.; Stoemenos, J.; Economou, N. A.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1389
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction Notice
ABSTRACT
Low-pressure chemical deposition of silicon by the pyrolysis of pure silane at relatively low temperatures and pressures below 100 mTorr can lead to structurally well-defined films. Below 10 mTorr the films exhibit evidence of local epitaxial growth, which can be particularly well defined on Si(100) wafers chemically treated prior to deposition outside the deposition chamber. Even so, the interface was found to be highly strained, and high-resolution electron microscopy observations were used to analyze the defect structures in the epitaxial layer as initiated at the interface.
ACCESSION #
9826629

 

Related Articles

  • Structure and Properties of a-Si:H Films Grown by Cyclic Deposition. Afanas’ev, V. P.; Gudovskikh, A. S.; Kon’kov, O. I.; Kazanin, M. M.; Kougiya, K. V.; Sazanov, A. P.; Trapeznikova, I. N.; Terukov, E. I. // Semiconductors;Apr2000, Vol. 34 Issue 4, p477 

    Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied, a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio σ[sub ph]/σ[sub d] is as high as 10[sup 7] under...

  • Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure. de Doer, W.D.; Meyer, D.J. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1286 

    Studies low-temperature chemical vapor deposition of epitaxial silicon and SiGe layers at atmospheric pressure. Silicon growth rate enhancement; Domain of molecular beam epitaxy.

  • Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp. Kumata, Ken; Itoh, Uichi; Toyoshima, Yasutake; Tanaka, Naoki; Anzai, Hiroyuki; Matsuda, Akihisa // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1380 

    The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a-Si:H). The electronic and optical properties of the films were investigated as functions of preparation...

  • A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon. Kushner, Mark J. // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2532 

    Deals with a study which presented a model for the plasma enhanced chemical vapor deposition of amorphous hydrogenated silicon in rf and direct current discharges. Description of the model; Results and conclusion.

  • Growth of high quality, large grain size, highly oriented diamond on Si (100). Janischowsky, K.; Stammler, M. // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2094 

    Discusses the growth of high quality, large grain size, highly oriented diamond films on silicon (100) through microwave and hot filament chemical vapor deposition processes. .Closely packed crystallites with (100) surfaces yielded by the sequential growth process; Similarity in the orientation...

  • Distribution of 1.68 eV emission from diamond films. Correia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C. // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p2207 

    Presents information pertaining to the growth of the free-standing polycrystalline chemical vapor deposition (CVD) diamond films on a silicon wafer, with reference to electrical behavior. Discussion of the luminescence; Performance of the micro-Raman spectra; What a detailed analysis by micro...

  • Enhancement in electron emission from polycrystalline silicon field emitter arrays coated with... Mimura, Hidenori; Hashiguchi, Gen // Journal of Applied Physics;9/15/1998, Vol. 84 Issue 6, p3378 

    Provides information on a study which used a transfer mold method to describe the diamondlike carbon coated poly-silicon emitter arrays' fabrication. Details on the usage of plasma-assisted chemical vapor deposition and physical vapor deposition; Discussion on the energy band diagram's emission...

  • Role of gas phase reactions in silicon chemical vapor deposition from monosilane. Scott, B. A.; Estes, R. D. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p1005 

    A simple flow reactor experiment is described which measures the gas phase reaction contribution to silicon chemical vapor deposition from SiH4. The approach uses the fact that the rate constant for SiH4 homogeneous decomposition exhibits a linear total pressure dependence in the low-pressure...

  • Digital chemical vapor deposition of SiO2. Nakano, M.; Sakaue, H.; Kawamoto, H.; Nagata, A.; Hirose, M.; Horiike, Y. // Applied Physics Letters;9/10/1990, Vol. 57 Issue 11, p1096 

    The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics