Erratum: Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs [Appl. Phys. Lett. 47, 95 (1985)]

Aoyagi, Yoshinobu; Masuda, Satoshi; Namba, Susumu; Doi, Atsutoshi
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p378
Academic Journal
Correction Notice
Presents a correction to the article 'Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs,' written by Yoshinobu Aoyagi, et al, and published in a 1985 issue of the journal 'Applied Physics Letters.'


Related Articles

  • Application of organometallic chemical vapor deposition mechanisms to lateral band-gap patterning on stepped surfaces. Colas, E.; Clausen, E. M.; Kapon, E.; Hwang, D. M.; Simhony, S. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2472 

    We report the study of organometallic chemical vapor deposition (OMCVD) on the stepped surfaces obtained by crystal growth on nonplanar vicinal (100) GaAs substrates. Scanning and transmission electron microscopy investigations were combined to identify two distinct diffusion mechanisms in...

  • MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics. Baidus, N.; Biryukov, A.; Dodin, E.; Drozdov, Yu.; Drozdov, M.; Nozdrin, Yu.; Andronov, A. // Semiconductors;Jan2013, Vol. 47 Issue 1, p158 

    The results of studies of MOCVD growth regularities of GaAs/AlGaAs superlattices with narrow forbidden minibands are presented. The spectra of photoluminescence and X-ray diffraction are measured, the concentration distribution profiles of components are determined by secondary-ion mass...

  • Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy. Mokkapati, S.; Tan, H. H.; Jagadish, C. // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p171104 

    The authors demonstrate multiple wavelength lasers fabricated from InGaAs quantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAs quantum dots with different band gap energies in selected regions of the substrate, for fabrication of the...

  • Optimization of growth conditions for undoped and doped GaAs layers using an empirical model of metalorganic vapor phase epitaxy. Arbenin, D. E.; Burlyaeva, E. V.; Marmalyuk, A. A. // Inorganic Materials;Jan2010, Vol. 46 Issue 1, p1 

    We present semiempirical relations that quantify the influence of metalorganic vapor phase epitaxy (MOVPE) conditions on the parameters of GaAs-based epitaxial layers. These relations have been used to create a MOVPE training simulator system.

  • Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers. Gocalinska, A.; Manganaro, M.; Pelucchi, E. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p17 

    We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 % to 100 %. The use of Trimethylantimony...

  • InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate. Vinokurov, D.; Nikolaev, D.; Pikhtin, N.; Stankevich, A.; Shamakhov, V.; Rastegaeva, M.; Rozhkov, A.; Tarasov, I. // Semiconductors;Dec2010, Vol. 44 Issue 12, p1592 

    InGaAs/GaAs/AlGaAs laser heterostructures are grown by MOCVD epitaxy on GaAs substrates. Mesastripe laser diodes with an aperture of 100 μm emitting at a wavelength of 1190 nm are fabricated. It is shown that, in these lasers, the active region is relaxed, which manifests itself in the spread...

  • Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide. Masatoshi Kawakita; Kyota Okabe; Takashi Kimura // Applied Physics Letters;1/11/2016, Vol. 108 Issue 2, p1 

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and...

  • Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy. Jen, H. R.; Cherng, M. J.; Stringfellow, G. B. // Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1603 

    Electron diffraction measurements on (100) GaAs1-xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating {100} oriented GaAs...

  • Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy. Shastry, S. K.; Zemon, S.; Kenneson, D. G.; Lambert, G. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p150 

    Very high purity GaAs layers with 77 K electron mobility values as high as 210 000 cm2/V s and a compensation ratio as low as ≊0.05 (NA+ND≊1014 cm-3) have been grown by organometallic vapor phase epitaxy. 4.2 K photoluminescence and magnetophotoluminescence spectra of these layers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics