Erratum: "Tuning spin transport properties and molecular magnetoresistance through contact geometry" [J. Chem. Phys. 140, 044716 (2014)]

June 2014
Journal of Chemical Physics;6/14/2014, Vol. 140 Issue 22, p229903-1
Academic Journal
Correction Notice
A correction to the article "Tuning spin transport properties and molecular magnetoresistance through contact geometry" that was published online in the June 13, 2014 issue is presented.


Related Articles

  • Giant magnetoresistance in TI2Mn2O7 with the pyrochlore... Shimakawa, Y.; Kubo, Y. // Nature;1/4/1996, Vol. 379 Issue 6560, p53 

    Reports on materials exhibiting giant magnetoresistance (GMR) which undergo a large change in electrical resistance in response to an applied magnetic field. What is GMR; Observations of GMR on TI2Mn2O7; Structure of GMR; Findings from observations.

  • Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling. Worledge, D. C.; Trouilloud, P. L. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p84 

    We demonstrate a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks. The RA is measured by making a series of four point probe resistance measurements on the surface of an unpatterned wafer at various probe spacings....

  • Giant magnetoresistance multilayers of high thermal stability with thicker magnetic layers. Hossain, S. A.; Pirkle, B. H.; Yang, J.; Parker, M. R. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5817 

    Describes a methodology for the improvement of thermal stability of giant megnetoresistive (GMR) NiFeCo/Cu multilayers. Impact of high-temperature anneal on GMR magnitude and field sensitivity; Details of the experimental techniques used.

  • Tunable tunneling magnetoresistance in a ferromagnet-metal-insulatorferromagnet tunneling junction. Sui-Pin Chen // Journal of Applied Physics;May2010, Vol. 107 Issue 9, p09C716-1 

    The tunneling magnetoresistance (TMR) ratio is investigated in a ferromagnet- metal-insulator-ferromagnet planar tunneling junction by use of the spin-polarized free-electron model. In this paper, the bias voltage is exploited to alter the tunneling direction and to tune the barrier height of...

  • Electrical-modulated magnetoresistance in multi-p-n heterojunctions of La0.9Sr0.1MnO3 and oxygen-vacant SrTiO3-δ on Si substrates. Kun Zhao; Kui-Juan Jin; Hui-Bin Lu; Meng He; Yan-Hong Huang; Guo-Zhen Yang; Jiandi Zhang // Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252110 

    The electrical modulation of the magnetoresistance (MR) from -70% to 80% under a small magnetic field of 200 Oe near room temperature is found in multi-p-n heterostructures of SrTiO3-δ/La0.9Sr0.1MnO3/SrTiO3-δ/La0.9Sr0.1MnO3/Si we fabricated. The mechanism causing the modulation of MR by...

  • Current-perpendicular-to-the-plane giant magnetoresistance of an all-metal spin valve structure with Co40Fe40B20 magnetic layer. You, C. Y.; Tian, N.; Goripati, H. S.; Furubayashi, T. // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142503 

    A current-perpendicular-to-the-plane giant magnetoresistance is demonstrated at room temperature by using Co40Fe40B20 alloy with an exchange biased stack of IrMn/CoFeB/Cu/CoFeB. The GMR effect is significantly enhanced by inserting a Co75Fe25 layer between CoFeB and Cu spacer to adjust the...

  • Enhanced magnetoresistance of semiconductor-metal hybrid structures. Holz, M.; Kronenwerth, O.; Grundler, D. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p431 

    Semiconductor-metal hybrid structures can show a large magnetoresistance effect, the extraordinary magnetoresistance (EMR) effect. In this work, we study theoretically the influence of the voltage probe configuration on the magnetoresistance of such hybrid structures. We find a configuration, in...

  • Spin-polarized And Ballistic Transport In InSb/InAlSb Heterostructures. Hong Chen; Peters, J. A.; Govorov, A. O.; Heremans, J. J.; Goel, N.; Chung, S. J.; Santos, M. B. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1379 

    We describe and experimentally demonstrate a method to create spin-polarized ballistic electrons through spin-orbit coupling in a two-dimensional electron system in an InSb/InAlSb heterostructure. Reflection of a spin-unpolarized injected beam from a lithographic barrier creates two fully...

  • Reverse dc erase medium noise analysis on exchange-coupling effect in coupled granular/continuous perpendicular recording media. Sonobe, Y.; Supper, N.; Takano, K.; Yen, B. K.; Ikeda, Y.; Do, H.; Muraoka, H.; Nakamura, Y. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7855 

    The role of intergranular exchange coupling was experimentally investigated in a coupled granular/ continuous (CGC) perpendicular medium structure. By changing the number of Co/Pt bilayers in the continuous layer, the degree of exchange coupling can be systematically controlled. The switching...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics