Publisher’s Note: “Electric field controlled Faraday rotation in an electro-optic/magneto-optic bilayer” [Appl. Phys. Lett. 97, 011901 (2010)]

Dadoenkova, Yu. S.; Lyubchanskii, I. L.; Lee, Y. P.; Rasing, Th.
September 2010
Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p119901
Academic Journal
Correction notice
A correction to the article "Electric Field Controlled Faraday Rotation in an Electro-Optic/Magneto-Optic Bilayer," that was published in a previous issue is presented.


Related Articles

  • Quantitative assessment of the effects of carrier screening on the average electric field in a... Tsen, K.T.; Joshi, R.P.; Salvador, A.; Botcharev, A.; Morkoc, H. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p406 

    Assesses the effects of carrier screening on the average effective electric field at applied voltages under laser photoexcitation. Impact of the increase of the density of photoexcited carriers; Significant decrease of the average electric field; Utilization of Monte Carlo simulation to obtain...

  • Charge-density wave as an electro-optical switch and memory. Ogawa, N.; Miyano, K. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3225 

    Switching and memory effects based on the deformation of the charge-density wave (CDW) in K[sub 0.3]MoO[sub 3] are demonstrated. The deformations, which greatly affect the CDW dynamic phase transition from creep phase to slide phase, can be set by an external electric field and be removed by...

  • Field emission from nonaligned carbon nanotubes embedded in a polystyrene matrix. Poa, C. H.; Silva, S. R. P.; Watts, P. C. P.; Hsu, W. K.; Kroto, H. W.; Walton, D. R. M. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3189 

    Low threshold fields of 1.6 V/μm and 2.6 V/μm were obtained for field emission from multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes embedded in polystyrene, respectively. A Fowler–Nordheim analysis of the results together with sheet resistivity data...

  • Field-dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction systems. Inoue, Kaoru; Sakaki, Hiroyuki; Yoshino, Junji // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p614 

    The transport properties of high-mobility electrons in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction systems have been investigated for electric fields (E) up to several kV/cm by pulsed Hall and pulsed current-voltage measurements. It was found that electron mobilities began to...

  • Thermal and electric field induced defects in InP metal-insulator-semiconductor structures. Tin, C. C.; Barnes, P. A.; Neely, W. C. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1940 

    The presence of deep levels in several samples of InP metal-insulator-semiconductor (MIS) structures was studied using the deep level transient spectroscopy technique. The InP MIS structures were fabricated using three different methods of oxide formation, two of which are chemical oxides and...

  • Electron velocity overshoot and valley repopulation effects in diamond. Osman, M. A.; Grubin, H. L.; Kreskovsky, J. P. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1902 

    Using ensemble Monte Carlo procedures, electron velocity overshoot and transient valley repopulation in diamond have been investigated as a function of field strength and orientation. It is found that the response of electrons to the sudden application of a 50 kV/cm electric field along <100>...

  • Multiphonon capture of carriers in parabolic quantum wells in a constant electric field. Sinyavskii, �. P.; Rusanov, A. M. // Physics of the Solid State;Jun98, Vol. 40 Issue 6, p1028 

    The zero-radius potential model is used to investigate multiphonon (radiationless) transitions between bound states of a parabolic quantum well (PQW) in a constant electric field whose intensity vector is perpendicular to the PQW surface. It is shown that thermal-capture thicknesses depend...

  • Erratum: �Effect of Electric Field on NMR Spectra in Centroantisymmetric Antiferromagnets� [Phys.SolidState42 (5), 903 (2000)]. Leskovets, V. V.; Turov, E. A. // Physics of the Solid State;Dec2000, Vol. 42 Issue 12, p2318 

    Presents the corrected equation in the article 'Effect of Electric Field on NMR Spectra in Centroantisymmetric Antiferromagnets,' by V.V. Leskovets and E.A. Turov, which appeared in a 2000 issue of the 'Physics of the Solid State.'

  • Effect of Electric Field on the Dielectric Permittivity of Betaine Phosphite Crystals in the Paraelectric Phase. Balashova, E. V.; Lemanov, V. V.; Kl�pperpieper, A. // Physics of the Solid State;Aug2002, Vol. 44 Issue 8, p1597 

    Temperature dependences of the dielectric permittivity of betaine phosphite crystals are studied both without and under application of an electric bias. It is shown that, in view of the fact that the high-temperature improper ferroelastic (antiferrodistorsive) phase transition at T[sub c1] = 355...

  • Quantum-Confined Stark Effect and Intraband Transitions in a Semiconductor Spherical Layer. Arutyunyan, V. A. // Physics of the Solid State;Jul2003, Vol. 45 Issue 7, p1342 

    The effect of an external homogeneous electric field on the states of charge carriers in a size-quantized spherical layer is considered. An explicit dependence of the energy shift on the external field strength and the geometric sizes of the sample is obtained, and the electro-optical absorption...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics