TITLE

Erratum: “Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors” [Appl. Phys. Lett. 95, 243504 (2009)]

AUTHOR(S)
Xia, Ling; del Alamo, Jesús A.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p029901
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction notice
ABSTRACT
A correction to the article "Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors" which was published online in the July 10, 2010 issue is presented.
ACCESSION #
52289455

 

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