Erratum: “Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors” [Appl. Phys. Lett. 95, 243504 (2009)]

Xia, Ling; del Alamo, Jesús A.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p029901
Academic Journal
Correction notice
A correction to the article "Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors" which was published online in the July 10, 2010 issue is presented.


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