TITLE

Erratum: “High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures” [Appl. Phys. Lett. 95, 011108 (2009)]

AUTHOR(S)
Lee, J. W.; Sone, C.; Park, Y.; Lee, S.-N.; Ryou, J.-H.; Dupuis, R. D.; Hong, C.-H.; Kim, H.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p139902
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction notice
ABSTRACT
A correction to the article "High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures" that was published in the 2009 issue is presented.
ACCESSION #
44449134

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics