Erratum: “The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 94, 053501 (2009)]

Rivera, C.; Muñoz, E.
July 2009
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p029902
Academic Journal
Correction notice
A correction to the article "The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors" that was published in the 2009 issue is presented.


Related Articles

  • The role of substrate quality on misfit dislocation formation in pseudomorphic high electron... Meshkinpour, M.; Goorsky, M.S.; Jenichen, B.; Streit, D. C.; Block, T. R. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3124 

    Examines the role of substrate quality on the epitaxial microstructure and performance of pseudomorphic InGaAs/GaAs high electron mobility transistor structures. X-ray diffraction; X-ray topography; Transmission electron microscopy; Misfit dislocation formation and density; Hall conductivity...

  • Where's the green?  // PS: Preventive Maintenance Monthly;Jan96, Issue 518, p7 

    Comments on the lack of the green sign on the air restriction indicator of high-electron mobility transistors (HEMTTs) and the meaning of the red and yellow signal.

  • Photoreflectance study of pseudomorphic high electron mobility transistors. Han, A.C.; Wojtowicz, M.; Pascua, D.; Block, T. R.; Streit, D. C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2607 

    Presents a photoreflectance study at room temperature of a number of pseudomorphic AlGaAs/inGaAs/AlGaAs high electron mobility transistors with different probing profiles grown by molecular beam epitaxy. Electric fields for Franz-Keldish oscillations; Channel carrier concentrations.

  • Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation... Fung, A.K.; Cong, L.; Albrecht, J. D.; Nathan, M. I.; Ruden, P. P. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p502 

    Investigates the effects of externally applied uniaxial stress on the device characteristics of semiconductor modulation doped field effect transistors. Shifts in the threshold voltages; Impact of piezoelectric effects; Measurement of the changes in the slopes of the transconductance versus...

  • Deep traps in unpassivated and Sc[sub 2]O[sub 3]-passivated AlGaN/GaN high electron mobility transistors. Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Danilin, V.N.; Zhukova, T.A.; Luo, B.; Ren, F.; Gila, B.P.; Onstine, A.H.; Abernathy, C.R.; Pearton, S.J. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2608 

    Sc[sub 2]O[sub 3] thin-film layers deposited by rf plasma-assisted molecular-beam epitaxy were found to significantly reduce the concentration of prominent surface traps with activation energies of 1 and 0.9 eV on AlGaN/GaN high electron mobility transistors (HEMTs). The surface passivation is...

  • Zero-field spin splitting in In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements. Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Lin, L. Y.; Jiang, C. P.; Guo, S. L.; Chu, J. H. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3132 

    Shubnikov–de Haas measurements were carried out for In[sub 0.52]Al[sub 0.48]As/In[sub x]Ga[sub 1-x]As metamorphic high-electron-mobility-transistor structures grown on GaAs substrates with different indium contents and/or different Si δ-doping concentrations. Zero-field (B→0)...

  • Room-temperature electron trapping in Al0.35Ga0.65As/GaAs modulation-doped field-effect transistors. Nathan, Marshall I.; Mooney, P. M.; Solomon, P. M.; Wright, S. L. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p628 

    Transient measurements of drain current are made as the gate voltage is pulsed in Al0.35Ga0.65As/GaAs depletion mode modulation-doped field-effect transistors. Large nonexponential decays are observed in the switching characteristics. Evidence is given which shows that these transients are...

  • GaN power transistors.  // Microwaves & RF;Feb2008 Supplement, Vol. 47, p30 

    The article evaluates the 28 V, 5 W class high-electron mobility transistor (HEMT) developed by Nitronex Corp.

  • ON THE RELIABILITY OF ACCELERATED TESTING IN AlGaAs/InGaAs/GaAs PHEMTs. Yarn, K.F.; Chien, W.C.; Wang, C.S. // Active & Passive Electronic Components;Jun2003, Vol. 26 Issue 2, p115 

    The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, I DS , I G , V P and gate Schottky barrier effects are discussed in detail....

  • Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors. Fan, Zhifang; Mohammad, S. N.; Aktas, O¨.; Botchkarev, A. E.; Salvador, A.; Morkoc¸, Hadis // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1229 

    Electrical characteristics of high performance of AlGaN/GaN modulation doped field-effect transistors (MODFETs) grown by reactive molecular beam epitaxy method are studied experimentally. The maximum measured drain-source current is 490 mA/mm, which saturates at a relatively low drain-source...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics