TITLE

Erratum: “The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 94, 053501 (2009)]

AUTHOR(S)
Rivera, C.; Muñoz, E.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p029902
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction notice
ABSTRACT
A correction to the article "The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors" that was published in the 2009 issue is presented.
ACCESSION #
43277412

 

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