Erratum: “High performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator” [Appl. Phys. Lett. 93, 242111 (2008)]

Kim, J. B.; Fuentes-Hernandez, C.; Kippelen, B.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p119901
Academic Journal
Correction notice
A correction to the article "High performance InGaZnO thin-film transistors with high-k amorphous Ba 0.5Sr0.5TiO3 gate insulator" that was published in the 2008 issue is presented.


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