TITLE

Publisher’s Note: “Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride trap density distribution” [Appl. Phys. Lett. 85, 660 (2004)]

AUTHOR(S)
Kim, Tae Hun; Sim, Jae Sung; Duk Lee, Jong; Shin, Hyung Cheol; Park, Byung-Gook
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4807
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction notice
ABSTRACT
This article was originally published with the fourth author's name misspelled; the correct spelling (Hyung Cheol Shin) appears above. In addition, parentheses were missing from Eq. (14). AIP apologizes for these errors. All online versions of the article have been corrected.
ACCESSION #
15075017

 

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