TITLE

Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82, 2410 (2003)]

AUTHOR(S)
Twigg, M. E.; Stahlbush, R. E.; Fatemi, M.; Arthur, S. D.; Fedison, J. B.; Tucker, J. E.; Wang, S.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4816
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction notice
ABSTRACT
Presents a correction to the article "Structure of Stacking Faults Formed During the Forward Bias of 4H-Sic P-I-N Diodes," published in the Volume 82, 2003 issue of the periodical "Applied Physics Letters."
ACCESSION #
13203678

 

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