The two dimensional electron system as a nanoantenna in the microwave and terahertz bands

Iñarrea, Jesús
December 2011
Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p232115
Academic Journal
Case Study
We study the magnetoresistance of two-dimensional electron systems under several radiation sources of different frequencies for moderate power. We use the model of radiation-driven electron orbits extended to this regime. First, we consider the case of two different radiations and we find a regime of superposition or interference of harmonic motions, i.e., a modulated magnetoresistance response with pulses and beats. Finally, we consider a multiple photoexcitation case where we propose the two-dimensional electron system as a potential nanoantenna device or ultrasensitive detector for the microwave and terahertz bands. Thus, these results could be of special interest in nanophotonics and nanoelectronics.


Related Articles

  • Band structure of terahertz metallic photonic crystals with high metal filling factor. Reinhard, Benjamin; Torosyan, Garik; Beigang, René // Applied Physics Letters;5/19/2008, Vol. 92 Issue 20, p201107 

    The excitation of resonant eigenmodes in two-dimensional metallic photonic crystals by incident terahertz pulses is both experimentally and numerically investigated. Transmission experiments are in excellent agreement with numerical calculations of the crystals’ photonic band structures...

  • Semiconductor nanowhiskers: Synthesis, properties, and applications. Dubrovskii, V. G.; Cirlin, G. E.; Ustinov, V. M. // Semiconductors;Dec2009, Vol. 43 Issue 12, p1539 

    Recent results of studying the semiconductor’s whisker nanocrystals are reviewed. Physical grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are given and the main epitaxial technologies of synthesis of whisker nanocrystals are described. Thermodynamic and...

  • Thermochemical nanopatterning of organic semiconductors. Fenwick, Oliver; Bozec, Laurent; Credgington, Dan; Hammiche, Azzedine; Lazzerini, Giovanni Mattia; Silberberg, Yaron R.; Cacialli, Franco // Nature Nanotechnology;Nov2009, Vol. 4 Issue 10, p664 

    Patterning of semiconducting polymers on surfaces is important for various applications in nanoelectronics and nanophotonics. However, many of the approaches to nanolithography that are used to pattern inorganic materials are too harsh for organic semiconductors, so research has focused on...

  • High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth. Marks, Zefram; Zeghbroeck, Bart // Optical & Quantum Electronics;Oct2011, Vol. 42 Issue 11-13, p771 

    A model for the maximum bandwidth achievable in metal-semiconductor-metal photodetectors is developed and simulated to determine the dimensions required for terahertz bandwidth. The bandwidth is found to exceed 1 THz for devices with line pitch less than 200 nm.

  • RF and THz Identification Using a New Generation of Chipless RFID Tags. PERRET, Etienne; HAMDI, Maher; VENA, Arnaud; GARET, Frederic; BERNIER, Maxime; DUVILLARET, Lionel; TEDJINI, Smail // Radioengineering;Jun2011, Vol. 20 Issue 2, p380 

    This article presents two chipless RFID approaches where data are reading using electromagnetic waves and where the medium encoding the data is completely passive. The former approach rests on the use of RF waves. The tags are comparable with very specific, planar, conductive, radar targets...

  • Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors. Bellotti, Enrico; Driscoll, Kristina; Moustakas, Theodore D.; Paiella, Roberto // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p113103-1 

    Wide-bandgap semiconductors such as GaN/AlGaN and ZnO/MgZnO quantum wells are promising for improving the spectral reach and high-temperature performance of terahertz quantum cascade lasers, due to their characteristically large optical phonon energies. Here, a particle-based Monte Carlo model...

  • Terahertz Sensing Based on Impurity Transitions in delta-doped GaAs/AlAs Multiple Quantum Wells. Seliuta, Dalius; Čechavicčius, Bronislovas; Kavaliauskas, Julius; Balakauskas, Saulius; ValusĆis, Gintaras; Sherliker, Ben; Halsall, Matthew; Lachab, Mohamed; Khanna, Suraj P.; Harrison, Paul; Linfield, Edmund H. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p183 

    Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p–type multiple quantum wells. Photocurrents are detected between 0.6–4.2 THz, and between 3.7–7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures,...

  • Antimonide-based diodes for terahertz mixers. Magno, R.; Champlain, J. G.; Newman, H. S.; Ancona, M. G.; Culbertson, J. C.; Bennett, B. R.; Boos, J. B.; Park, D. // Applied Physics Letters;Jun2008, Vol. 92 Issue 24, p243502 

    Antimonide-based p+N junctions have been grown by molecular beam epitaxy and processed into diodes. The diodes have good rectification with ideality factors near 1, and high saturation current densities of 2.5×10-2 A/cm2. S-parameter measurements to 50 GHz indicate a 1 Ω series resistance...

  • Terahertz intersubband absorption in GaN/AlGaN step quantum wells. Machhadani, H.; Kotsar, Y.; Sakr, S.; Tchernycheva, M.; Colombelli, R.; Mangeney, J.; Bellet-Amalric, E.; Sarigiannidou, E.; Monroy, E.; Julien, F. H. // Applied Physics Letters;11/8/2010, Vol. 97 Issue 19, p191101 

    We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (λ≈143 μm) and 4.2 THz (λ≈70 μm) in nitride-based semiconductor quantum wells. The structures consist of a 3 nm thick GaN well, an Al0.05Ga0.95N step barrier, and a 3 nm thick Al0.1Ga0.9N barrier....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics