TITLE

MOSFETs: Increased Efficiency In Bridge Rectifiers

AUTHOR(S)
Sevel, Billy
PUB. DATE
June 2007
SOURCE
EDN;6/7/2007, Vol. 52 Issue 12, Special section p21
SOURCE TYPE
Trade Publication
DOC. TYPE
Case Study
ABSTRACT
The article describes the case of increasing efficiency in bridge rectifiers. The metal oxide semiconductor field-effect transistors (MOSFET) approach could increase efficiency in many applications. Higher voltage FET like 60-100 volts used in a bridge rectifier circuit could significantly enhance power savings. Comparison of different approaches show that using the MOSFET approach results in over a half Watt of power savings, which is 98% more efficient that the standard diode bridge rectifier solution. Another potential application for the approach is reverse-polarity protection for a battery circuit. The MOSFET approach can be used as a flexible, inexpensive and efficient alternative to the bridge rectifier.
ACCESSION #
25640264

 

Related Articles

  • Ultra Low Power Electronics (ULPE). Bozeman, Eric; Neff, Joseph // AIP Conference Proceedings;4/19/2011, Vol. 1339 Issue 1, p282 

    No abstract available.

  • Low Voltage Squarer Using Floating Gate MOSFETs. Pandey, Rishikesh; Gupta, Maneesha // International Journal of Electronics, Circuits & Systems;2009, Vol. 3 Issue 1, p53 

    A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed...

  • MOSFETs Support sub-1-V Power Supplies.  // Power Electronics Technology;Jun2006, Vol. 32 Issue 6, p11 

    The article features the ALD114804/ ALD114804A and ALD114904A. These are n-channel matched-pair EPAD depletion-mode Metal Oxide Semiconductor Field-Effect Transistors(MOSFET) arrays offered in quad or dual versions and in PDIP or SOIC packages. These MOSFET arrays enable circuits to operate in...

  • Motivating two-port network analysis through elementary and advanced examples. Elwakil, A. S. // International Journal of Electrical Engineering Education;Oct2010, Vol. 47 Issue 4, p404 

    We seek to motivate the use of two-port network circuit analysis techniques by proposing two examples: one is elementary, the other is advanced. In particular, we start by deriving the transmission matrices for small-signal equivalent models of the BJT and MOS transistors. We then proceed to the...

  • Digitally managed power circuits. Cleveland, Terry // EDN;10/25/2007, Vol. 52 Issue 22, p59 

    The article deals with the integration of digital features into power circuits. Among the digital features are host communications, output-voltage/current programming, and fault diagnostics and management. Analog components and features include metal-oxide semiconductor field-effect transistor...

  • Three-phase bridge.  // Design News;9/18/89, Vol. 45 Issue 18, p137 

    Features the power MOSFET, Three-Phase Bridge power module encased in a space-saving isolated package called the ICePAK from the Semiconductor Products Sector of Motorola Inc.

  • Electronic Circuit Breaker Senses RDS(ON) Voltage Drops, Eliminating Sense Resistor.  // Electronic Design;5/26/2005, Vol. 53 Issue 11, p30 

    Discusses the ability of Linear Technology Corp.'s LTC4213 electronic circuit breaker to sense the drop across the on-resistance in the external MOSFET.

  • The Analysis of Dead Time on Switching Loss in High and Low Side MOSFETs of ZVS Synchronous Buck Converter. Yahaya, N. Z.; Lee, M. K.; Begam, K. M.; Awan, M. // International Journal on Control System & Instrumentation;Jun2011, Vol. 2 Issue 2, p6 

    This work is about the analysis of dead time variation on switching losses in a Zero Voltage Switching (ZVS) synchronous buck converter (SBC) circuit. In high frequency converter circuits, switching losses are commonly linked with high and low side switches of SBC circuit. They are activated...

  • Gate Drive Transformer Circuit Maintains Fast Turn-Off Time. Mally, Rick // Electronic Design;10/20/2011, Vol. 59 Issue 14, p76 

    The article describes a gate drive transformer circuit (GDT) which drives half-bridge power circuits. It presents a design of GDT providing the metal oxide semiconductor field-effect transistors (MOSFET) drive signals while maintaining a fast turn-off time. It also illustrates a typical...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics