Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

Kang, S. J.; Yi, Y.; Kim, C. Y.; Whang, C. N.; Callcott, T. A.; Krochak, K.; Moewes, A.; Chang, G. S.
June 2005
Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232103
Academic Journal
Book Chapter
The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π-bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π-bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.


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