Hybrid states of Tamm plasmons and exciton polaritons

Kaliteevski, M.; Brand, S.; Abram, R. A.; Iorsh, I.; Kavokin, A. V.; Shelykh, I. A.
December 2009
Applied Physics Letters;12/21/2009, Vol. 95 Issue 25, p251108
Academic Journal
Channeling of exciton polaritons in the plane of semiconductor microcavities can be achieved by the deposition of metallic mesas on the top of the semiconductor structure. We show theoretically that the regime of strong coupling between cavity polaritons and Tamm surface plasmons is possible in such structures. The effect is favorable for the spatial confinement of polaritons and the formation of hybrid one-dimensional plasmon-polariton modes.


Related Articles

  • Bias-dependent carrier and phonon dynamics in semiconductor–metal heterointerfaces. Chang, Y.-M. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p928 

    Coherent longitudinal optical phonons in a GaAsP/Au heterointerface are impulsively generated and detected with time-resolved second-harmonic generation. It is found that the photoexcited electrons, ballistically transporting from the metal layer into the semiconductor region, can rapidly screen...

  • Half and full collision matrix methods for scattering: Application to multichannel curve crossing. Band, Yehuda B.; Mies, Frederick H. // Journal of Chemical Physics;2/15/1988, Vol. 88 Issue 4, p2309 

    We present methods of numerically solving the multichannel Schrödinger equation by propagating exact first-order coupled equations for a specially designed half collision matrix X(r). The method requires choosing a convenient set of reference potentials with which to generate a pair of...

  • Generation and propagation of surface plasmons in periodic metallic structures. Torosyan, G.; Rau, C.; Pradarutti, B.; Beigang, R. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3372 

    The generation and propagation of surface plasmon polaritons in periodic metallic structures using femtosecond terahertz pulses is reported. The transmission and emission properties clearly show the influence of Wood’s anomalies. The velocity of propagation is determined experimentally...

  • Limitations Due to the Spontaneous Emission of Low-Frequency Photons on the Applicability of the Newtonian Description of Particle Motion in a Gas. Gertsenshteın, M. E.; Kravtsov, Yu. A. // Journal of Experimental & Theoretical Physics;Oct2000, Vol. 91 Issue 4, p658 

    It is shown that the spontaneous emission of low-frequency photons in collision of atoms and molecules in a gas is very rapidly, in several free-transit intervals, radically changes the trajectories and the order of the collisions of the particles as compared with the predictions of the...

  • Charm and bottom production in two-photon collisions with OPAL. Csilling, A´kos // AIP Conference Proceedings;2001, Vol. 571 Issue 1, p276 

    A preliminary update of the previous OPAL measurement of the inclusive production of D[sup *±] mesons in anti-tagged photon-photon collisions is presented together with the first preliminary OPAL measurement of bottom production in photon-photon collisions. © 2001 American Institute of...

  • Photons from nucleus-nucleus collisions at ultra-relativistic energies. Alam, Jan-e; Hatsuda, T.; Nayak, Tapan K.; Roy, Pradip; Sarkar, Sourav; Sinha, Bikash // AIP Conference Proceedings;2002, Vol. 610 Issue 1, p522 

    We compare the photon emission rates from hot hadronic matter with in-medium mass shift and Quark Gluon Plasma (QGP). It is observed that the WA98 data can be well reproduced by hadronic initial state with initial temperature ∼200 MeV if the universal scaling of temperature dependent...

  • Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567 

    We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The...

  • Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics. O'Regan, T. P.; Fischetti, M. V.; Sorée, B.; Jin, S.; Magnus, W.; Meuris, M. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103705 

    We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-κ dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the...

  • Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InP. Bardyszewski, W.; Yevick, D. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2713 

    Discusses theoretical and experimental results relating to the pure-collision and phonon-assisted Auger coefficients of semiconductor laser materials. Overlap integrals and energy-momentum dispersion relation; Spectral density functions; Numerical method.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics