TITLE

Photoluminescence properties of erbium doped InGaN epilayers

AUTHOR(S)
Sedhain, A.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041113
SOURCE TYPE
Academic Journal
DOC. TYPE
Bibliography
ABSTRACT
We report on the photoluminescence properties of erbium (Er) doped InxGa1-xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.
ACCESSION #
43494211

 

Related Articles

  • Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN. Song, S. F.; Chen, W. D.; Chunguang Zhang; Liufang Bian; Hsu, C. C.; Baoshan Ma; Li, G. H.; Jianjun Zhu // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p4930 

    Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595...

  • Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition. Ugolini, C.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151903 

    The authors report on the synthesis of Er-doped GaN epilayers by in situ doping by metal-organic chemical vapor deposition (MOCVD). The optical and electrical properties of the Er-doped GaN epilayers were studied by photoluminescence (PL) spectroscopy and van der Pauw–Hall method. Both...

  • Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition. Khan, M. Asif; Skogman, R.A. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1366 

    Examines the switched atomic layer epitaxy of single crystal gallium nitride over basal plane sapphire substrates. Use of a low pressure metalorganic chemical vapor deposition system; Resistivity of the material; Display of excellent band-edge photoluminescence.

  • Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular... Tarsa, E.J.; Heying, B.; Wu, X. H.; Fini, P.; DenBaars, S. P.; Speck, J. S. // Journal of Applied Physics;12/1/1997, Vol. 82 Issue 11, p5472 

    Investigates the structure, morphology and optical properties of homoepitaxial gallium nitride (GaN) layers grown by molecular beam epitaxy on metalorganic chemical vapor deposition (MOCVD)-grown GaN `template' layers. Transition from N-stable to Ga-stable growth modes; Spiral growth features;...

  • Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots. Moon, Yong-Tae; Kim, Dong-Joon; Park, Jin-Sub; Oh, Jeong-Tak; Lee, Ji-Myon; Ok, Young-Woo; Kim, Hyunsoo; Park, Seong-Ju // Applied Physics Letters;7/30/2001, Vol. 79 Issue 5 

    The temperature dependence of the photoluminescence (PL) of InGaN films, grown by metalorganic chemical vapor deposition, has been investigated. A strained InGaN thin film which contains composition-fluctuated regions shows the so-called S-shaped temperature dependence of the dominant PL peak...

  • Enhanced optical emission from GaN films grown on a silicon substrate. Xiong Zhang; Soo-Jin Chua; Peng Li; Kok-Boon Chong; Zhe-Chuan Feng // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1984 

    Describes the growth of gallium nitride (GaN) on a silicon-(001) substrate with specially designed composite intermediate layers. Metal-organic chemical vapor deposition; Ultrathin amorphous silicon layer; GaN/Al[sub x]Ga[sub 1-x]N (x = 0.20); Photoluminescence and x-ray diffraction spectroscopy.

  • Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Pan, M.; Steckl, A. J. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p9 

    Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on GaN/Al[SUB2]O[SUB3] substrates. Trimethylgallium (TMGa), ammonia (NH[SUB3]), and europium...

  • Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus.... Smith, M.; Lin, J.Y. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p635 

    Examines the mechanism of room-temperature intrinsic optical transition in high quality and purity gallium nitride epilayer grown by metalorganic chemical vapor deposition. Dependence of the photoluminescence emission peak position on excitation intensity; Measurement of transition energy at...

  • Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers. Neu, G.; Teisseire, M.; Frayssinet, E.; Knap, W.; Sadowski, M. L.; Witowski, A. M.; Pakula, K.; Leszczynski, M.; Prystawko, P. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics