Photoluminescence properties of erbium doped InGaN epilayers

Sedhain, A.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.
July 2009
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041113
Academic Journal
We report on the photoluminescence properties of erbium (Er) doped InxGa1-xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.


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