Influence of symmetry mismatch on heteroepitaxial growth of perovskite thin films

Proffit, D. L.; Jang, H. W.; Lee, S.; Nelson, C. T.; Pan, X. Q.; Rzchowski, M. S.; Eom, C. B.
September 2008
Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111912
Academic Journal
Epitaxial thin films of (110) orthorhombic CaRuO3 grown on orthorhombic (110) NdGaO3 and cubic (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7 (LSAT) substrates serve as a model system isolating the influence of oxygen octahedron distortion on epitaxial growth of thin films. CaRuO3 grows as a coherent single crystal on NdGaO3 with an atomically smooth surface, whereas CaRuO3 on LSAT is multidomain with a rough surface despite the equivalent film stoichoimetry and average lattice mismatch between CaRuO3 and the substrates. Anisotropic metallic resistivity of the single crystal CaRuO3 was observed at 10 K with different electrical behaviors as a function of temperature for [110] and [001] in-plane directions.


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