Quantum cascade lasers grown by metalorganic vapor phase epitaxy

Roberts, J. S.; Green, R. P.; Wilson, L. R.; Zibik, E. A.; Revin, D. G.; Cockburn, J. W.; Airey, R. J.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4221
Academic Journal
We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually purged vent/run valves. A low-temperature threshold current density of 10 kA/cm[SUP2] and maximum operating temperature of 140 K have been measured. These performance levels are comparable with early GaAs-based devices grown using molecular-beam epitaxy. The measured emission wavelength (λ∼11.8 μm) is approximately 3-μm longer than the calculated transition wavelength, which we explain using a model incorporating compositional grading of the active region barriers.


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