TITLE

Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy

AUTHOR(S)
Bratland, K. A.; Foo, Y. L.; Desjardins, P.; Greene, J. E.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4247
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The incorporation of dilute Sn concentrations C[SUBSn] during Ge(001) low-temperature molecular-beam epitaxy significantly increases the critical thickness h[SUB1](T[SUBs]) for the onset of epitaxial breakdown. With C[SUBSn=6×10[SUP19]cm[SUP-3], h[SUB1] increases by an order of magnitude at T[SUBs]= 95[SUP°]C, while gains in h[SUB1](T[SUBs]) by factors ranging from 3.2 at 95[SUP°]C to 2.0 at 135[SUP°]C are obtained with C[SUBSn]=1 3×10[SUP18]cm[SUP-3] (20 parts per million!). Nevertheless, the ratio of the surface width at breakdown to the in-plane correlation length remains constant, independent of T[SUBs] and C[SUBSn], showing that epitaxial breakdown for both Ge(001) and Sn-doped Ge(001) is directly related to surface roughening. We attribute the dramatic Sn-induced increases in h[SUB1](T[SUBs]) to enhancements in both the Ge surface)diffusivity and the probability of interlayer mass transport. This, in turn, results in more efficient filling of interisland trenches, and thus delays epitaxial breakdown during low-temperature growth.
ACCESSION #
9987407

 

Related Articles

  • GeSn p-i-n detectors integrated on Si with up to 4% Sn. Oehme, M.; Schmid, M.; Kaschel, M.; Gollhofer, M.; Widmann, D.; Kasper, E.; Schulze, J. // Applied Physics Letters;10/1/2012, Vol. 101 Issue 14, p141110 

    GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the...

  • Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si[sub 1 � ][sub x]Ge[sub x] Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources. Orlov, L. K.; Ivina, N. L. // Semiconductors;Feb2002, Vol. 36 Issue 2, p191 

    The coefficients of segregation of germanium atoms were measured for the Si[sub 1-x]Ge[sub x] system grown by molecular-beam epitaxy with combined Si-GeH[sub 4] sources under the conditions of efficient filling of surface bonds by the products of the decomposition of hydrides. In their turn,...

  • Low-temperature growth of Ge on Si(100). Eaglesham, D.J.; Cerullo, M. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2276 

    Studies heteroepitaxial molecular beam epitaxial growth of germanium on silicon at low temperatures. Low-temperature limit to growth; Suppression of island formation; Planar growth at all temperatures; Occurrence of strain relaxation of the planar epilayers.

  • Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening. Bramblett, T. R.; Lu, Q.; Lee, N.-E.; Taylor, N.; Hasan, M.-A.; Greene, J. E. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1504 

    Reports on the first growth kinetics and microstructural investigations of germanium (Ge) gas-source molecular beam epitaxy from digermane. Introduction to Ge; Experimental procedure; Results and discussion.

  • Strain relaxation of faceted Ge islands on Si(113). Jian-hong Zhu; Miesner, C. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2395 

    Studies the strain relaxation of faceted germanium islands on silicon(113) grown by molecular beam epitaxy. Atomic force microscopy (AFM) image of germanium islands; Raman spectra right on a surface germanium island and on the germanium wetting layer; Photoluminescence spectra of the germanium...

  • Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular.... Xun Wang; Zui-min Jiang // Applied Physics Letters;12/15/1997, Vol. 71 Issue 24, p3543 

    Investigates the growth of uniform germanium (Ge) dots on silicon(100) using molecular beam epitaxy. Evidence of a peak downward shift of Ge-Ge mode; Impact of phonon confinement on Ge-Ge mode in the Ge dots; Attribution of a photoluminescence peak development to free exciton longitudinal...

  • Low-defect-density germanium on silicon obtained by a novel growth phenomenon. Malta, D.P.; Posthill, J.B. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p844 

    Examines the growth of heteroepitaxial germanium on silicon using molecular beam epitaxy. Indication on the localized germanium melting and subsequent silicon local alloying; Creation of dense and confined threading dislocation network; Manifestation of etch pit density measurement.

  • Ge profile from the growth of SiGe buried layers by molecular beam epitaxy. Godbey, D.J.; Ancona, M.G. // Applied Physics Letters;11/2/1992, Vol. 61 Issue 18, p2217 

    Examines the germanium (Ge) concentration profile of thin Si/SiGe heterostructures using elemental source molecular epitaxy. Interpretation of X-ray photoelectron spectroscopy measurements through kinetic simulation; Factors causing Ge depletion at the leading interface; Effects of Ge rich...

  • Investigation of strain-symmetrized and pseudomorphic SimGen superlattices by x-ray reciprocal space mapping. Koppensteiner, E.; Bauer, G.; Kibbel, H.; Kasper, E. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3489 

    Demonstrates the usefulness of x-ray reciprocal space mapping for the nondestructive, precise analysis of both the strain status, and the composition of the active layers and the virtual substrates, by comparing silicon/germanium structures grown by molecular-beam epitaxy on different buffers. ...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics