Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

Macaluso, R.; Sun, H. D.; Dawson, M. D.; Robert, F.; Bryce, A. C.; Marsh, J. H.; Riechert, H.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4259
Academic Journal
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-μm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO[SUB2]-capped samples, while uncapped and SiO[SUB2]-capped samples by) plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.


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