Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

Tereshchenko, O. E.; Paget, D.; Chiaradia, P.; Bonnet, J. E.; Wiame, F.; Taleb-Ibrahimi, A.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4280
Academic Journal
A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InCl[SUBx]. Annealing at 330[SUP°]C induces desorption of this overlayer and reveals a clean arsenic-rich (×34)/c(2×8) surface. The indium-rich (4×2)/c(8Times;2) reconstruction is obtained upon further annealing to 410[SUP°]C.


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