TITLE

High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

AUTHOR(S)
Pophristic, M.; Guo, S. P.; Peres, B.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4289
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly-conductive and crack-free n-Al[SUB0.6]Ga[SUB0.4]N films with thickness up to 1μm were achieved by using high-temperature AlN or AlGaN/AlN superlattice (SL) buffer layers. Room-temperature Hall measurements show the highest electron concentration of 3.5×10[SUP18]cm[SUP-3] with mobility of 25 cm[SUP2]/V s. Electron mobility was increased from 25 to 35 cm[SUP2]/V s by introducing the AlGaN/AlN SL buffer layer. Second ion mass spectroscopy indicates that there is high oxygen doping concentration in the film, and that the film resistivity decreases with increasing oxygen concentration from 1×10[SUP17] to ∼1×10[SUP19]cm[SUP-3].
ACCESSION #
9987393

 

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