High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition

Pophristic, M.; Guo, S. P.; Peres, B.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4289
Academic Journal
Highly-conductive and crack-free n-Al[SUB0.6]Ga[SUB0.4]N films with thickness up to 1μm were achieved by using high-temperature AlN or AlGaN/AlN superlattice (SL) buffer layers. Room-temperature Hall measurements show the highest electron concentration of 3.5×10[SUP18]cm[SUP-3] with mobility of 25 cm[SUP2]/V s. Electron mobility was increased from 25 to 35 cm[SUP2]/V s by introducing the AlGaN/AlN SL buffer layer. Second ion mass spectroscopy indicates that there is high oxygen doping concentration in the film, and that the film resistivity decreases with increasing oxygen concentration from 1×10[SUP17] to ∼1×10[SUP19]cm[SUP-3].


Related Articles

  • Assessment of NSOM resolution on III-V semiconductor thin films. Labardi, M.; Gucciardi, P.G.; Allegrini, M.; Pelosi, C. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS397 

    Abstract. Emission-mode aperture near-field scanning optical microscopy (NSOM) is applied to semiconductor thin films for resolution assessment and artifact investigation purposes. We have used GaAs thin films deposited on GaP(111) substrates with A and B polarities by metal organic vapour phase...

  • Electrical and magnetic properties of Ga1-xGdxN grown by metal organic chemical vapor deposition. Gupta, Shalini; Zaidi, Tahir; Melton, Andrew; Malguth, Enno; Yu, Hongbo; Liu, Zhiqiang; Liu, Xiaotao; Schwartz, Justin; Ferguson, Ian T. // Journal of Applied Physics;Oct2011, Vol. 110 Issue 8, p083920 

    This paper presents the first report on Gd doping (0%-4%) of GaN thin films by metal organic chemical vapor deposition. The Ga1-xGdxN films grown in this study were found to be of good crystalline quality, single-phase, and unstrained, with a high saturation magnetization strength of 20 emu/cm3...

  • Realization of Intrinsic p-Type ZnO Thin Films by Metal Organic Chemical Vapor Deposition. Tan, S. T.; Chen, B. J.; Sun, X. W.; Yu, M. B.; Zhang, X. H.; Chua, S. J. // Journal of Electronic Materials;Aug2005, Vol. 34 Issue 8, p1172 

    P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N2O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O ratio in the range of 0.05-0.2 without N2O flow. Secondary ion mass spectroscopy...

  • Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Bayram, C.; Péré-laperne, N.; Razeghi, M. // Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p201906 

    AlN/GaN superlattices (SLs) employing various well widths (from 1.5 to 7.0 nm) are grown by metal-organic chemical vapor deposition technique at various growth temperatures (TS) (from 900 to 1035 °C). The photoluminescence (PL), x-ray diffraction, and intersubband (ISB) absorption...

  • Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD. Díaz-Reyes, J.; Galván-Arellano, M.; Peña-Sierra, R. // Superficies y Vacío;2010, Vol. 23 Issue 1, p13 

    It presents the structural and electrical characterization of rectangular and triangular barriers based on AlxGa1-xAs/GaAs heterostructures grown in a metallic-arsenic-based MOCVD system. The gallium and aluminum precursors were the organmetallic compounds trimethylgallium and trimethylaluminum,...

  • Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si[sub x]Al[sub 1-x]N interlayers. Akasaka, T.; Nishida, T.; Taniyasu, Y.; Kasu, M.; Makimoto, T.; Kobayashi, N. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4140 

    Crack-free AlGaN thin films were directly grown on SiC substrates by metalorganic vapor phase epitaxy, and their threading dislocation density was reduced by one order of magnitude using 1–2 nm thick, heavily Si-doped AlN multiple interlayers. The interlayers form Si[sub x]Al[sub 1-x]N...

  • Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy. Huang, G. S.; Yao, H. H.; Lu, T. C.; Kuo, H. C.; Wang, S. C. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p104901 

    Aluminum (Al) incorporation in AlxGa1-xN films grown by low-pressure metal organic vapor phase epitaxy using trimethylaluminum (TMAl) and trimethylgallium as group III precursors has been systematically studied. The solid phase Al composition of the AlxGa1-xN films varied nonlinearly with the Al...

  • Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. Bryan, I.; Rice, A.; Hussey, L.; Bryan, Z.; Bobea, M.; Mita, S.; Xie, J.; Kirste, R.; Collazo, R.; Sitar, Z. // Applied Physics Letters;2/11/2013, Vol. 102 Issue 6, p061602 

    Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the...

  • p-type conduction in unintentional carbon-doped ZnO thin films. Tan, S. T.; Sun, X. W.; Yu, Z. G.; Wu, P.; Lo, G. Q.; Kwong, D. L. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p072101 

    p-type conduction has been observed in unintentional carbon-doped ZnO thin films grown by metal organic chemical vapor deposition through postgrowth annealing treatment. The existence of carbon, which has been verified by secondary ion mass spectrometry and x-ray photoelectron spectroscopy, was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics