Epitaxial colossal magnetoresistive La[sub 0.67](Sr,Ca)[sub 0.33]MnO[sub 3] films on Si

Kim, J.-H.; Khartsev, S. I.; Grishin, A. M.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4295
Academic Journal
La[SUB0.67](Sr,Ca)[SUB0.33]MnO[SUB3] (LSCMO) films have been grown by a pulsed-laser deposition technique on Si(001) (substrates buffered with Bi[SUB4]Ti[SUB3]O[SUB12]/CeO[SUB2]/yttrium-stabilized zirconia (YSZ) heteroepitaxial layers. X-ray diffraction has revealed cube-on-cube growth of an epitaxial Bi[SUB4]Ti[SUB3]O[SUB12]/CeO[SUB2]/YSZ/Si heterostructure whereas the LSCMO layer grows in the ''diagonal-on-side'' manner on top of the Bi[SUB4]Ti[SUB3]O[SUB12] BTO template. The maximum temperature coefficient of resistivity (TCR)=4.4% K[SUB-1] and colossal magnetoresistance (CMR) Δρ/ρ;2.9% kOe[SUP-1] have been reached at 294 K. This was achieved due to the successive improvement of c-axis orientation of the layers: Full widths at half-maximum 0.65[SUP°], 0.58[SUP°], 0.65[SUP°], 1.13[SUP°], and 0.18[SUP°] in LSCMO/BTO/CeO[SUB2]/YSZ/Si stack, respectively. As a prototype of an uncooled bolometer, heteroepitaxial CMR structure on Si demonstrates, at 294 K, the noise equivalent temperature difference of 1.2 μK/√Hz@30 Hz.


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