TITLE

Metal–oxide–semiconductor devices using Ga[sub 2]O[sub 3] dielectrics on n-type GaN

AUTHOR(S)
Lee, Ching-Ting; Chen, Hong-Wei; Lee, Hsin-Ying
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4304
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using a photoelectrochemical method involving a He-Cd laser, Ga[SUB2]O[SUB3] oxide layers were directly grown on n-type GaN. We demonstrated the performance of the resultant metal-oxide semiconductor devices based on the grown Ga[SUB2]O[SUB3] layer. An extremely low reverse leakage current of 200 pA was achieved when devices operated at 220 V. Furthermore, high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively, were obtained. Using a photoassisted current-voltage method, a low interface state density of 2.53×10[SUP11]cm[SUP-2]Ev[sup-1] was estimated. The varactor devices permit formation of inversion layers, so that they may be applied for the fabrication of metal-oxide-semiconductor field-effect transistors.
ACCESSION #
9987388

 

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