In[sub 1-x]Mn[sub x]Sb—a narrow-gap ferromagnetic semiconductor

Wojtowicz, T.; Cywinski, G.; Lim, W. L.; Liu, X.; Dobrowolska, M.; Furdyna, J. K.; Yu, K. M.; Walukiewicz, W.; Kim, G. B.; Cheon, M.; Chen, X.; Wang, S. M.; Luo, H.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4310
Academic Journal
A narrow-gap ferromagnetic In[SUB1-x]Mn[SUBx]Sb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In[SUB1-x]Mn[SUBx]Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T[SUBC] ranging up to 8.5 K. The observed values of T[SUBC] agree well with the existing models of carrier-induced ferromagnetism.


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