TITLE

Thickness dependence of the properties of epitaxial MgB[sub 2] thin films grown by hybrid physical-chemical vapor deposition

AUTHOR(S)
Pogrebnyakov, A. V.; Redwing, J. M.; Jones, J. E.; Xi, X. X.; Xu, S. Y.; Li, Qi; Vaithyanathan, V.; Schlom, D. G.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4319
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB[SUB2] thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB[SUB2] film deposition rate depends linearly on the concentration of B[SUB2]H[SUB6] in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB[SUB2] films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature T[SUBc] increased and the residual resistivity Ρ[SUB0] decreased. Above 3000 Å, a T[SUBc] of 41.8 K, a ρ of 0.28 μΩ cm, and a residual resistance ratio RRR of over 30 were obtained.
ACCESSION #
9987382

 

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