Thickness dependence of the properties of epitaxial MgB[sub 2] thin films grown by hybrid physical-chemical vapor deposition

Pogrebnyakov, A. V.; Redwing, J. M.; Jones, J. E.; Xi, X. X.; Xu, S. Y.; Li, Qi; Vaithyanathan, V.; Schlom, D. G.
June 2003
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4319
Academic Journal
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB[SUB2] thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB[SUB2] film deposition rate depends linearly on the concentration of B[SUB2]H[SUB6] in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB[SUB2] films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature T[SUBc] increased and the residual resistivity Ρ[SUB0] decreased. Above 3000 Å, a T[SUBc] of 41.8 K, a ρ of 0.28 μΩ cm, and a residual resistance ratio RRR of over 30 were obtained.


Related Articles

  • Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO[sub 3]. Gill, D.M.; Conrad, C.W. // Applied Physics Letters;9/29/1997, Vol. 71 Issue 13, p1783 

    Fabricates thin-film channel waveguide electro-optic modulator in epitaxial BaTiO[sub 3] on magnesium oxide. Function of thin-film ferroelectrics in improving the performance of integrated optic devices; Hindrance in the realization of active thin-film devices; Synthesis of films by...

  • Heteroepitaxial growth of KNbO3 single-crystal films on SrTiO3 by metalorganic chemical vapor deposition. Onoe, Atsushi; Yoshida, Ayako; Chikuma, Kiyofumi // Applied Physics Letters;7/8/1996, Vol. 69 Issue 2, p167 

    Potassium niobate (KNbO3) thin films have been deposited on silicon (Si) and strontium titanate (SrTiO3) substrates by metalorganic chemical vapor deposition. Stoichiometric KNbO3 films were obtained by adjusting the partial pressure of precursors. The crystallinity was examined by x-ray...

  • Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers. Powell, J. A.; Larkin, D. J.; Matus, L. G.; Choyke, W. J.; Bradshaw, J. L.; Henderson, L.; Yoganathan, M.; Yang, J.; Pirouz, P. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1442 

    Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α-SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process. The...

  • Chemical vapor deposition of heteroepitaxial Si[sub 1-x-y]Ge[sub x]C[sub y] films on (100)Si.... Atzmon, Z.; Bair, A.E. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2559 

    Describes the growth of heteroepitaxial silicon[sub 1-x-y]germanium[sub x]carbon[sub y] thin film on (100) silicon substrates by chemical vapor deposition. Structural characterization using Rutherford backscattering spectrometry; Sensitivity of crystallinity to carbon[sub 2]hydrogen[sub 4] flow...

  • Epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition. Nystrom, M.J.; Wessels, B.W. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p365 

    Examines the preparation of epitaxial potassium niobate thin films by low pressure metalorganic chemical vapor deposition. Characteristics of the linear and nonlinear optical properties of the films; Measured refractive index of the films; Indications of low surface roughness and excellent...

  • Epitaxial growth of BaTiO[sub 3] thin films by plasma-enhanced metalorganic chemical vapor.... Chern, C.S.; Zhao, J. // Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1144 

    Examines the epitaxial growth of BaTiO[sub 3] thin films by plasma enhanced metalorganic chemical vapor deposition. Orientation of the thin films; Confirmation of the high degree of epitaxial crystallinity; Morphology of the film surface.

  • Growth kinetics of (100), (110), and (111) homoepitaxial diamond films. Chu, C.J.; Hauge, R.H. // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1393 

    Investigates the growth kinetics of diamond films on natural diamond substrates by hot-filament chemical vapor deposition. Dependence of diamond film growth on methane flow rate; Increase of diamond film growth with temperature; Relationship between growth rate and surface morphology.

  • Observation of open-ended stacking fault tetrahedra in Si[sub 0.85]Ge[sub 0.15] grown on.... Howard, David J.; Bailey, William E.; Paine, David C. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2893 

    Examines the epitaxial growth of Si[sub 0.83]Ge[sub 0.15] thin films by rapid thermal chemical vapor deposition on patterned and planar silicon surfaces. Lithographic patterning and anisotropic etching of the substrates; Use of cross-section and plan-view transmission electron microscopy;...

  • Substrate dependence in the growth of epitaxial Pb1-xLaxTiO3 thin films. Kim, Y.; Erbil, A.; Boatner, L. A. // Applied Physics Letters;10/7/1996, Vol. 69 Issue 15, p2187 

    The metalorganic chemical vapor deposition (MOCVD) technique has been applied to the growth of epitaxial Pb1-xLaxTiO3 (PLT) thin films with x=0.28. By first introducing an initial TiO2 layer, three-dimensional epitaxial PLT films were grown on the (100) surface of MgO substrate. For both KTaO3...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics