TITLE

Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO[sub 2] gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

AUTHOR(S)
Mahapatra, R.; Maikap, S.; Lee, Je-Hun; Kar, G. S.; Dhar, A.; Hwang, Nong-M.; Kim, Doh-Y.; Mathur, B. K.; Ray, S. K.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4331
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interfacial characteristics of high-kappa; ZrO[SUB2] on O[SUB2] and N[SUB2]O-plasma-treated Si[SUB0.69]Ge[SUB0.3]C[SUB0.01] surfaces have been investigated using secondary ion mass spectroscopy and x-ray photoelectron spectroscopy. N[SUB2]O-plasma-treated films show the formation of a nitrogen-rich Zr-germano-silicate interfacial layer between the deposited ZrO[SUB2] and SiGeC films. The N-treated film has a higher accumulation capacitance (∼1200 pF), lower leakage current density (7×10[SUP-9]A/cm[SUP2]@-1 V), higher breakdown field (∼11 MV/cm), and higher interfacial layer dielectric constant (∼10) than that of the non-nitrogen-treated films. Relatively lower positive trap charge generated by a constant current stressing in N-incorporated dielectric films makes it attractive for scaled metal-oxide-semiconductor field-effect transistor applications.
ACCESSION #
9987378

 

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