TITLE

The Research of Output Voltage Error of Matrix Converter Decreased Under Low Switch Frequency

AUTHOR(S)
Yi Hui Xia; Xiao Feng Zhang; Ming Zhong Qiao
PUB. DATE
July 2014
SOURCE
Advanced Materials Research;2014, Vol. 971-973, p1194
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Its switch frequency can't be high because of the restrains of insulated gate bipolar transistors(IGBTS) when high power electrical motor driven by matrix converter. This paper mainly discuses about the reason for output voltage error with low switch frequency. And based on the reasons, a method for decreasing output voltage error is proposed, that is to say that referenced input current and output voltage is calculated by using their average value in one sample in the indirect space vector pulse modulation(ISVPWM) when switch frequency is low. Simulation results coincide with theoretical analysis, verifying that the proposed method is feasible and theoretical analysis is right.
ACCESSION #
99581291

 

Related Articles

  • DETERMINATION OF THE BEST TYPE OF IGBT MODULE FOR APPLICATION IN FREQUENCY CONVERTERS. Ostrenko, V. S.; Kulinich, Ye. V. // Scientific Bulletin of National Mining University;2012, Issue 5, p80 

    Purpose. To develop methods of determination of the best type IGBT module for certain voltage, current and frequency. Methodology. At the basis of the methodology we have laid the statement that the best module should have the highest value of the quality criterion, which corresponds to definite...

  • DETERMINATION OF THE BEST TYPE OF IGBT MODULE FOR APPLICATION IN FREQUENCY CONVERTERS. Ostrenko, V. S.; Kulinich, Ye.V. // Scientific Bulletin of National Mining University;2012, Issue 5, p80 

    Purpose. To develop methods of determination of the best type IGBT module for certain voltage, current and frequency. Methodology. At the basis of the methodology we have laid the statement that the best module should have the highest value of the quality criterion, which corresponds to definite...

  • New improved three-phase hybrid multilevel inverter with reduced number of components. Saeidabadi, Saeid; Gandomi, Amin Ashraf; Hosseini, Seyed Hossein; Sabahi, Mehran; Gandomi, Yasser Ashraf // IET Power Electronics;2017, Vol. 10 Issue 12, p1403 

    A new three-phase hybrid multilevel inverter configuration is proposed. The proposed inverter is modular and consists of three single-phase H-bridge inverters, one three-phase H-bridge inverter and auxiliary modules for increasing the number of output voltage levels. The performance of the...

  • Snap-back free shorted-anode super-junction TCIGBT. Peng Luo; Sweet, Mark; Sankara Narayanan, Ekkanath Madathil // IET Power Electronics;2018, Vol. 11 Issue 4, p654 

    A novel structure called the shorted-anode super-junction trench clustered insulated gate bipolar transistor (SA-SJTCIGBT) is proposed and demonstrated through numerical simulations in 1.2 kV, field-stop technology. This device is based on the SJ-TCIGBT concept. In the SA-SJ-TCIGBT structure,...

  • On The TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs. Nawaz, Muhammad; Chimento, Filippo // Materials Science Forum;2014, Vol. 778-780, p1034 

    This paper addresses the design diagnostic study of 4H-SiC based IGBTs using two dimensional numerical computer simulations. Using identical set of physical device parameters (doping, thicknesses), simulated structure was first calibrated with the experimental data. A minority carrier life time...

  • DEVICE AND TECHNOLOGY SIMULATION OF IGBT ON SOI STRUCTURE. Lovshenko, I.; Stempitsky, V.; Tran Tuan Trung // Materials Physics & Mechanics;2014, Vol. 20 Issue 2, p111 

    Results of computer simulation of manufacturing a bipolar transistor with insulated gate (IGBT) on the base of technology "Silicon on insulator" (SOI) are presented. Current-voltage characteristics of the investigated IGBT device were calculated. The results obtained were used as a base for...

  • A Novel Structure Trench IGBT with Full Hole-barrier Layer. Yang Lingling // Applied Mechanics & Materials;2014, Issue 543-547, p757 

    A Full Hole-barrier Trench gate Insulated Gate Bipolar Transistor (FH-TIGBT) device structure is proposed for the first time. Compared with Carrier Stored Trench IGBT (CSTBT), which adds a carrier stored n layer between p base and n base in Trench IGBT (TIGBT), the new structure appends an n...

  • A New Type of IGBT Device with Electronic Enhance Collector. Yushu LAI; Yan XIONG; Shengrong ZHONG; Jian XIONG // Applied Mechanics & Materials;2014, Issue 644-650, p3844 

    A new type of substrate structure Electronic Enhance Collector IGBT (EEC-IGBT) was proposed, and the working principle was introduced in this paper. Compared with conventional IGBT, the substrate of EEC-IGBT was divided by the groove structure composed of oxide and aluminum. Finally, simulation...

  • Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. Jing Zhu; Yunwu Zhang; Weifeng Sun; Yangyang Lu; Yicheng Du; Yangbo Yi // IET Circuits, Devices & Systems;2016, Vol. 10 Issue 5, p410 

    A bipolar gate drive circuit considering the mitigation of the turn-off losses (Eoff) and the overshoot of the collector voltage (VOV) for the insulated gate bipolar transistor (IGBT) is proposed with 600 V bulk-silicon bipolarcomplementary metal-oxide-semiconductor double-diffused...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics