TITLE

Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

AUTHOR(S)
Laurent, Matthew A.; Gupta, Geetak; Wienecke, Steven; Muqtadir, Azim A.; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.
PUB. DATE
November 2014
SOURCE
Journal of Applied Physics;2014, Vol. 116 Issue 18, p183704-1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlxInyGa(1-x-y)N materials show promise for use in GaN-based heterojunction devices. The growth of these materials has developed to the point where they are beginning to see implementation in high electron mobility transistors (HEMTs) and light emitting diodes. However, the electrical properties of these materials are still poorly understood, especially as related to the net polarization charge at the AlInGaN/GaN interface (Qπ(net)). All theoretical calculations of Qπ(net) share the same weakness: dependence upon polarization bowing parameters, which describe the deviation in Qπ(net) from Vegard's law. In this study, direct analysis of Qπ(net) for Al0.54In0.12Ga0.34N/ GaN HEMTs is reported as extracted from C-V, I-V, and Hall measurements performed on samples grown by metalorganic chemical vapor deposition. An average value for Qπ(net) is calculated to be 2.015 × 10-6 C/cm2 , with just 6.5% variation between measurement techniques.
ACCESSION #
99527396

 

Related Articles

  • Degradation Mechanisms for GaN and GaAs High Speed Transistors. Cheney, David J.; Douglas, Erica A.; Lu Liu; Chien-Fong Lo; Gila, Brent P.; Fan Ren; Pearton, Stephen J. // Materials (1996-1944);Dec2012, Vol. 5 Issue 12, p2498 

    We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices,...

  • Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters. Wu, Ping-Jung; Wang, Yu-Cian; Chen, I-Chen // Nanoscale Research Letters;Dec2013, Vol. 8 Issue 1, p1 

    Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiN x (Si-NCs/SiN x) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron...

  • Graphene-GaAs/AlxGa1-xAs heterostructure dual-function field-effect transistor. Tang, Chiu-Chun; Li, Ming-Yang; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung // Applied Physics Letters;11/12/2012, Vol. 101 Issue 20, p202104 

    We have integrated chemical vapor-deposited graphene and GaAs/AlxGa1-xAs heterostructure into a hybrid field effect transistor (FET). Depending on the operation scheme, graphene can be utilized either as a gate electrode for a GaAs-based high electron mobility transistor (HEMT) or as a channel...

  • Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. Killat, N.; Montes Bajo, M.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M. // Applied Physics Letters;11/4/2013, Vol. 103 Issue 19, p193507 

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during...

  • Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition. Li, Jiun-Yun; Huang, Chiao-Ti; Rokhinson, Leonid P.; Sturm, James C. // Applied Physics Letters;10/14/2013, Vol. 103 Issue 16, p162105 

    Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in isotopically enriched 28Si with extremely high mobility (522 000 cm2/V s) are presented. The samples were grown by chemical vapor deposition using enriched silane. The fraction of the spin-carrying isotope 29Si...

  • SiN layers for the in-situ passivation of GaN-based HEMT structures. Yunin, P.; Drozdov, Yu.; Drozdov, M.; Korolev, S.; Okhapkin, A.; Khrykin, O.; Shashkin, V. // Semiconductors;Nov2015, Vol. 49 Issue 11, p1421 

    A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of...

  • Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer. KIM, M. S.; JIN, S.-M.; CHOI, H. Y.; KIM, G. S.; YIM, K. G.; KIM, S.; NAM, G.; YOON, H. S.; KIM, Y.; LEE, D.-Y.; KIM, JIN S.; KIM, JONG S.; LEEM, J.-Y. // Acta Physica Polonica, A.;Jun2011, Vol. 119 Issue 6, p875 

    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3--glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1×1019 cm-3 was grown by metal-organic chemical vapor deposition....

  • Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors. Lugani, Lorenzo; Carlin, Jean-François; Py, Marcel A.; Martin, Denis; Rossi, Francesca; Salviati, Giancarlo; Herfurth, Patrick; Kohn, Erhard; Bläsing, Jürgen; Krost, Alois; Grandjean, Nicolas // Journal of Applied Physics;Jun2013, Vol. 113 Issue 21, p214503 

    We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm2/V s) and low sheet resistivity (356 Ω/[larger_open_square]) is achieved at...

  • Radiation Effects in GaN-Based High Electron Mobility Transistors. Pearton, S.; Hwang, Ya-Shi; Ren, F. // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Jul2015, Vol. 67 Issue 7, p1601 

    GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. In this paper, we review data on the radiation resistance of GaN-based transistors such as AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics