TITLE

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

AUTHOR(S)
Tikhov, S.; Gorshkov, O.; Antonov, I.; Kasatkin, A.; Koryazhkina, M.
PUB. DATE
October 2014
SOURCE
Technical Physics Letters;Oct2014, Vol. 40 Issue 10, p837
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using as an example metal-insulator-semiconductor structures based on GaAs with stabilized (by yttrium oxide) zirconium dioxide, which show the effect of resistive-switching random-access memory, the possibility is considered of controlling phenomena associated with the forming process in the insulator and on the insulator-semiconductor interface, as well as in the semiconductor, by measuring the response of the semiconductor.
ACCESSION #
99256098

 

Share

Other Topics