The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

Tikhov, S.; Gorshkov, O.; Antonov, I.; Kasatkin, A.; Koryazhkina, M.
October 2014
Technical Physics Letters;Oct2014, Vol. 40 Issue 10, p837
Academic Journal
Using as an example metal-insulator-semiconductor structures based on GaAs with stabilized (by yttrium oxide) zirconium dioxide, which show the effect of resistive-switching random-access memory, the possibility is considered of controlling phenomena associated with the forming process in the insulator and on the insulator-semiconductor interface, as well as in the semiconductor, by measuring the response of the semiconductor.


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