Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

Travlos, A.; Boukos, N.; Apostolopoulos, G.; Dimoulas, A.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4053
Academic Journal
The origin of the superstructure observed in epitaxial yttrium oxide (Y[SUB2]O[SUB3]) layers on Si(001) is determined by electron energy loss spectroscopy (EELS). The oxygen K edge is measured both in the superstructure and a defect-free region of the Y[SUB2]O[SUB3] layers and they are compared to EELS spectra obtained from bulk stoichiometric and reduced Y[SUB2]O[SUB3]. It is shown that as a result of the epitaxial growth, oxygen vacancies order into a superstructure creating nonstoichiometric regions in an otherwise stoichiometric Y[SUB2]O[SUB3] layer. Furthermore, it is shown that oxygen deficiency introduces a change of the density of states of the lower conduction band of Y[SUB2]O[SUB3].


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