TITLE

Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO[sub 2]

AUTHOR(S)
Stesmans, A.; Afanas’ev, V. V.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4074
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron spin resonance analysis of (100)Si/HfO[SUB2] interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO[SUB2] interfaces--P[SUBb0] and P[SUBb1] centers--are universally observed upon hydrogen detachment. The density of the P[SUBb0] is higher than in the (100)Si/SiO[SUB2] structures and is sensitive to the deposition process. However, the density can be significantly reduced by annealing of the Si/HfO[SUB2] structures in O-containing ambient, likely through re-establishing the Si/SiO[SUB2] interface. Also, the P[SUBb]-type centers can be entirely passivated by hydrogen already at 400 °C. The density of fast interface states closely follows the variations in the P[SUBb0] center density, suggesting it as the dominant contribution to the fast interface states.
ACCESSION #
9924699

 

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