Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells

Özgür, Ümit; Everitt, Henry O.; He, Lei; Morkoç, Hadis
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4080
Academic Journal
Stimulated emission (SE) and ultrafast carrier relaxation dynamics were measured in two Al[SUBx]Ga[SUB1-x]N/GaN multiple-quantum-well (MQW) structures, grown in a Ga-rich environment with x = 0.2 and 0.3, respectively. The threshold density for SE (I[SUBth] ≃ 100 μJ/cm[SUP2]) was found to be independent of x. Room-temperature, time-resolved, differential transmission measurements mapped the carrier relaxation mechanisms for above barrier energy excitation. Photoexcited carriers are observed to relax into the QWs in < ps, while carrier recombination times as fast as 30 ps were measured. For excitation above I[SUBth], SE is shown to deplete carriers in the barriers through a cascaded refilling of the QW state undergoing SE. Similar behavior is seen in an Al[SUB0.3]Ga[SUB0.7]N/GaN MQW grown with a N-rich atmosphere, but the relaxation phenomena of all AlGaN MQWs are significantly faster than observed in InGaN MQWs of similar structure.


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