Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

Hanbicki, A. T.; van ’t Erve, O. M. J.; Magno, R.; Kioseoglou, G.; Li, C. H.; Jonker, B. T.; Itskos, G.; Mallory, R.; Yasar, M.; Petrou, A.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4092
Academic Journal
Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current--voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor.


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