Realization of one-chip-multiple-wavelength laser diodes with II–VI/III–V compound semiconductors

Song, J. S.; Cho, M. W.; Oh, D. C.; Makino, H.; Hanada, T.; Yao, T.; Zhang, B. P.; Segawa, Y.; Chang, J. H.; Song, H. S.; Cho, I. S.; Kim, H. W.; Jung, J. J.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4095
Academic Journal
A laser diode which includes II-VI device structure directly grown on III-V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II-VI/III-V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II-VI and III-VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm[SUP2], respectively. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures, which will stimulate the investigation of multifunctional optical devices.


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