TITLE

Substrate effect on the crystal structure and ferroelectricity of low-temperature-deposited Pb(Zr, Ti)O[sub 3] thin films by metalorganic chemical vapor deposition

AUTHOR(S)
Tokita, Kouji; Aratani, Masanori; Funakubo, Hiroshi
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4122
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Tetragonal Pb(Zr[SUB0.35]Ti[SUB0.65])O[SUB3] thin films were deposited at deposition temperatures ranging from 395 °C to 510 °C on (111)Pt/Ti/SiO[SUB2]/Si, (111)Ir/TiO[SUB2]/SiO[SUB2]/Si, and (100)Ru/SiO[SUB2]/Si substrates by metalorganic chemical vapor deposition. When the deposition temperature was above 415 °C, the remanent polarization (Pr) and the coercive field (Ec) were almost the same for the Pb(Zr[SUB0.35]Ti[SUB0.65])O[SUB3] thin films deposited on these substrates. This means that the electrical properties were not significantly affected by the type of substrate above 415 °C. However, at 395 °C, the film deposited on the (111)Pt/Ti/SiO[SUB2]/Si substrate showed a larger Pr value than those on the (111)Ir/TiO[SUB2]/SiO[SUB2]/Si and (100)Ru/SiO[SUB2]/Si substrates. The lower crystallinity of the films deposited on the (111)Ir/TiO[SUB2]/SiO[SUB2]/Si and (100)Ru/SiO[SUB2]/Si substrates, due to the oxidation of the Ir and Ru surfaces before starting film deposition, thwarts the attainment of good ferroelectricity.
ACCESSION #
9924683

 

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