Substrate effect on the crystal structure and ferroelectricity of low-temperature-deposited Pb(Zr, Ti)O[sub 3] thin films by metalorganic chemical vapor deposition

Tokita, Kouji; Aratani, Masanori; Funakubo, Hiroshi
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4122
Academic Journal
Tetragonal Pb(Zr[SUB0.35]Ti[SUB0.65])O[SUB3] thin films were deposited at deposition temperatures ranging from 395 °C to 510 °C on (111)Pt/Ti/SiO[SUB2]/Si, (111)Ir/TiO[SUB2]/SiO[SUB2]/Si, and (100)Ru/SiO[SUB2]/Si substrates by metalorganic chemical vapor deposition. When the deposition temperature was above 415 °C, the remanent polarization (Pr) and the coercive field (Ec) were almost the same for the Pb(Zr[SUB0.35]Ti[SUB0.65])O[SUB3] thin films deposited on these substrates. This means that the electrical properties were not significantly affected by the type of substrate above 415 °C. However, at 395 °C, the film deposited on the (111)Pt/Ti/SiO[SUB2]/Si substrate showed a larger Pr value than those on the (111)Ir/TiO[SUB2]/SiO[SUB2]/Si and (100)Ru/SiO[SUB2]/Si substrates. The lower crystallinity of the films deposited on the (111)Ir/TiO[SUB2]/SiO[SUB2]/Si and (100)Ru/SiO[SUB2]/Si substrates, due to the oxidation of the Ir and Ru surfaces before starting film deposition, thwarts the attainment of good ferroelectricity.


Related Articles

  • Flat controller. Ahmed, Waqar // Product Finishing;Oct99, Vol. 52 Issue 9, p23 

    Discusses the critical vapor deposition process used in the production of thin film transistors used in flat panel liquid crystal displays. Use of an array of thin film transistors; Enhancement of the process with plasma; Critical requirement of uniform deposition over a large surface area.

  • Formation and thermal stability of amorphous Cu-Zr thin films deposited by coevaporation. Minemura, T.; van den Broek, J. J.; Daams, J. L. C. // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4426 

    Attempts to characterize vapor-deposited thin films from the viewpoints of the formation and thermal stability of the amorphous phase. Uses of amorphous alloy films; Composition dependence of the activation energy for the crystallization corresponding to the films.

  • Anomalous hysteresis properties of iron films deposited on liquid surfaces. Quan-Lin Ye; Chun-Mu Feng; Xiao-Jun Xu; Jin-Sheng Jin; A.-Gen Xia; Gao-Xiang Ye // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p013906 

    A nearly free sustained iron film system, deposited on silicone oil surfaces by vapor-phase deposition method, has been fabricated and its crystal structure as well as magnetic properties has been studied. Both the temperature-dependent coercivity Hc(T) and exchange anisotropy field HE(T) of the...

  • In situ study on layer-by-layer growth in vapor deposition of linear long-chain molecules using a quartz crystal microbalance. Kubono, Atsushi; Minagawa, Yuko; Ito, Takaya // Journal of Applied Physics;Nov2013, Vol. 114 Issue 18, p183516 

    The thin film formation at the initial stage of the vapor deposition of organic long-chain molecules was monitored using a quartz crystal microbalance. The growth rate of the thin films was strongly dependent on the substrate temperature: at substrate temperatures below 287 K, the film growth...

  • Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications. Yang, S. Y.; Zavaliche, F.; Mohaddes-Ardabili, L.; Vaithyanathan, V.; Schlom, D. G.; Lee, Y. J.; Chu, Y. H.; Cruz, M. P.; Zhan, Q.; Zhao, T.; Ramesh, R. // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p102903 

    We have grown BiFeO3 thin films on SrRuO3/SrTiO3 and SrRuO3/SrTiO3/Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition...

  • Radiative recombination in CuInSe2 thin films. Zott, S.; Leo, K. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p356 

    Analyzes the radiative recombination processes in CuInSe2 thin films grown by multisource physical vapor deposition. Photoluminescence and photoluminescence excitation spectra; Optical transitions in Cu-rich CuInSe2 thin films; Optical transitions in In-rich CuInSe2 thin films; Nature of the...

  • Single-crystal Pb(ZrxTi1-x)O3 thin films prepared by metal-organic chemical vapor deposition... Foster, C.M.; Bai, G.-R. // Journal of Applied Physics;3/1/1997, Vol. 81 Issue 5, p2349 

    Studies the systematic compositional variation of electronic and optical properties in single-crystal Pb(ZrxTi1-x)o3 thin films prepared by metal-organic chemical vapor deposition. Template electrode layers promoting epitaxial growth; Degrees of crystallinity and orientation; Root mean square...

  • Surface-induced clustering in vapor deposited Co1-xPtx and Ni1-xPtx films (abstract). Shapiro, A.L.; Rooney, P.W. // Journal of Applied Physics;4/17/1997, Vol. 81 Issue 8, p5053 

    Presents an abstract of the paper `Surface-Induced Clustering in Vapor Deposited Co1-xPtx and Ni1-xPtx Films,' presented by A.L. Shapiro, P.W. Rooney, et al, at the American Institute of Physics' 1997 Conference on Magnetism and Magnetic Materials. Correlation between Co clustering and...

  • Transmission electron microscopy investigation and first-principles calculation of the phase... Su, D.S.; Su-Huai Wei // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2483 

    Studies the ordering of metal atoms in CuInS[sub 2] and CuGaSe[sub 2] thin films grown by vapor-phase epitaxy on Si(001) and GaAs (001) substrates. Use of transmission electron microscopy and first-principles total energy calculations in the study; Coexistence of chalcopyrite and CuAu-like...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics