TITLE

45° rotational epitaxy of SrTiO[sub 3] thin films on sulfide-buffered Si

AUTHOR(S)
Yoo, Y.-Z.; Ahmet, P.; Jin, Zheng-Wu; Nakajima, K.; Chikyow, T.; Kawasaki, M.; Konishi, Y.; Yonezawa, Y.; Song, J. H.; Koinuma, H.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sulfide was employed as a buffer layer for the growth of SrTiO[SUB3] (STO) thin films on Si. In order to utilize a relationship of a 45° rotational lattice match between Si and STO, ZnS, with almost the same lattice constant as Si, was used as the buffer. The buffer layer showed a partially disordered region at the ZnS/Si interface, owing to steady interdiffusion between ZnS and Si. STO film on ZnS buffered Si showed the rotational epitaxy with respect to Si and sharp STO/ZnS interface. Propagation of stacking faults from the ZnS/Si interface was observed, but those plane defects were terminated at the rotational STO/ZnS interface, resulting in high-quality STO films. The dielectric constant of the STO/ZnS film was 34.
ACCESSION #
9924682

 

Related Articles

  • Electronic states at the interface between thin films of ZnS and crystalline p-silicon. Sands, David; Brunson, Kevin M.; Thomas, Clive B. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1340 

    Studies electronic states at the interface between thin films of zinc sulfide and crystalline p-silicon. Measurement of the density of interface states; Similarities between the interface and that between sputtered zinc sulfide; Capacitance-voltage characteristics of aluminum-evaporated zinc...

  • Density of ZnS thin films grown by atomic layer epitaxy. Oikkonen, M.; Tuomi, T.; Luomajärvi, M. // Journal of Applied Physics;2/15/1988, Vol. 63 Issue 4, p1070 

    Focuses on a study which examined the density of zinc sulphide thin films. Techniques in determining the density of atomic layer epitaxy; Methodology; Results and discussion.

  • The thickness dependency of the dielectric constant in certain thin-film dielectrics. Feldman, Charles // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p872 

    Presents a study that discussed an anomalous peak in the dielectric constant in zinc sulfide thin films observed in 1962 in light of an observation of a similar phenomenon in BaTiO[sub3] films in 1987. Explanations for such peak; Description of the peak observed in zinc sulfide films;...

  • Degenerate four-wave mixing in planar CS2 covered waveguides. Karaguleff, C.; Stegeman, G. I.; Fortenberry, R.; Zanoni, R.; Seaton, C. T. // Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p621 

    Degenerate four-wave mixing in a thin-film waveguide is demonstrated for the first time. A reflectivity of 10-9 at a power density of 5 MW/cm2 was obtained for liquid CS2 placed on top of a glass waveguide.

  • Preparation of CuInS[sub 2] films by sulfurization of Cu-In-O films. Wada, Takahiro; Negami, Takayuki; Nishitani, Mikihiko // Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1943 

    Examines the preparation of CuInS[sub 2] thin films by sulfurization of Cu-In-oxygen films. Application of pulsed laser deposition and H[sub 2]S gas annealing; Characteristics of the obtained films; Effect of annealing temperature on the structural and optical properties of the CuInS[sub 2] films.

  • The effects of KrF pulsed laser and thermal annealing on the crystallinity and surface morphology... Masito, E. A.; Craven, M. R. // Journal of Applied Physics;9/1/1999, Vol. 86 Issue 5, p2562 

    Presents information on a study which investigated the crystallinity and surface morphology of zinc sulphide doped-with-manganese thin films using x-ray diffraction and atomic force microscopy analysis. Experimental and analysis conditions; Results and discussion; Conclusions.

  • Influence of a two-dimensional SiO[sub 2] nanorod structure on the extraction efficiency of ZnS:Mn thin-film electroluminescent devices. Young Rag Di, J.M.; Yoon Chang Kim, J.M.; Sang-Hwan Cho, J.M.; Dong Sik Zang, J.M.; Young-Duk Huh, J.M.; Sun Jin Yun, J.M. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1377 

    To improve light extraction from thin-film electroluminescent (TFEL) devices, we have introduced a two-dimensional (2-D) SiO[sub 2] nanorod pattern into the glass substrate of a TFEL. This periodic modulation converts the guided waves in the high refractive index ZnS:Mn phosphor layers into...

  • Formation of cadmium sulfide (CdS) nanofilm on a Cd(OH)/SiO precursor layer. Vorokh, A.; Kozhevnikova, N.; Rempel, A.; Magerl, A. // Journal of Structural Chemistry;Dec2010, Vol. 51 Issue 6, p1170 

    Dense thin nanostructured films of cadmium sulfide CdS obtained by chemical deposition from aqueous solutions are strongly bound to a substrate due to the formation of cadmium hydroxide Cd(OH) in the system. By X-ray reflectometry and grazing incidence diffraction it is found that at the...

  • Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation. Lee, Ming-Kwei; Yen, Chih-Feng; Cheng, Chi-Hsuan; Lee, Jung-Chan // Applied Physics A: Materials Science & Processing;Sep2013, Vol. 112 Issue 4, p1057 

    Liquid phase deposited SiON film on InP with (NH)S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passivation. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics