45° rotational epitaxy of SrTiO[sub 3] thin films on sulfide-buffered Si

Yoo, Y.-Z.; Ahmet, P.; Jin, Zheng-Wu; Nakajima, K.; Chikyow, T.; Kawasaki, M.; Konishi, Y.; Yonezawa, Y.; Song, J. H.; Koinuma, H.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4125
Academic Journal
Sulfide was employed as a buffer layer for the growth of SrTiO[SUB3] (STO) thin films on Si. In order to utilize a relationship of a 45° rotational lattice match between Si and STO, ZnS, with almost the same lattice constant as Si, was used as the buffer. The buffer layer showed a partially disordered region at the ZnS/Si interface, owing to steady interdiffusion between ZnS and Si. STO film on ZnS buffered Si showed the rotational epitaxy with respect to Si and sharp STO/ZnS interface. Propagation of stacking faults from the ZnS/Si interface was observed, but those plane defects were terminated at the rotational STO/ZnS interface, resulting in high-quality STO films. The dielectric constant of the STO/ZnS film was 34.


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