TITLE

Electrical properties and transport in boron nitride nanotubes

AUTHOR(S)
Radosavljevic, M.; Appenzeller, J.; Derycke, V.; Martel, R.; Avouris, Ph.; Loiseau, A.; Cochon, J.-L.; Pigache, D.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4131
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated electronic devices based on single-walled boron nitride nanotubes (BNNTs). Our measurements indicate that all BNNTs are semiconducting, and p-doped. Temperature dependence of two terminal transport experiments suggests that at low drain fields, transport is dominated by thermionic emission over 250-300 meV Schottky contact barriers. Gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation.
ACCESSION #
9924680

 

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