Development of gold-doped Hg[sub 0.79]Cd[sub 0.21]Te for very-long-wavelength infrared detectors

Shih, H. D.; Kinch, M. A.; Aqariden, F.; Liao, P. K.; Schaake, H. F.; Nathan, V.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4157
Academic Journal
Gold-doped Hg[SUB1-x]Cd[SUBx]Te samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ∼ 13.2 μm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to ∼ 2 × 10[SUP14] cm[SUP-3] and gold to ∼ 7 × 10[SUP15] cm[SUP-3], and were characterized by secondary ion mass spectroscopy, Hall measurements, and minority carrier lifetime measurements. State-of-the-art minority carrier lifetime of ∼ 0.82 μs was obtained.


Related Articles

  • Acoustostimulated activation of bound defects in CdHgTe alloys. Vlasenko, A. I.; Olikh, Ya. M.; Savkina, R. K. // Semiconductors;Apr99, Vol. 33 Issue 4, p398 

    This paper describes the results of acoustodynamic studies of the electrical parameters (effective electron concentration n = 1/eR[sub H] and Hall mobility �[sub H] = R[sub H]/?) of n-Cd[sub x]Hg[sub 1-x]Te crystals (x�0.22). It is shown that ultrasonic loading (with intensities up to...

  • A Study on Properties of Infrared Detector for a HGCDTE Epilayers Using Photocurrent Measurement. Park, C. S.; Hong, K. J.; Lee, S. Y.; Jeong, J. W.; Baek, H. W.; Im, K. H.; Bordia, R. K. // AIP Conference Proceedings;2003, Vol. 657 Issue 1, p1307 

    Hg1-xCdxTe (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 °C for 15 min. When the thickness of the CdTe buffer layer was 5 μm or thicker, the full width at half maximum values obtained from...

  • Long Wavelength Infrared, Molecular Beam Epitaxy, HgCdTe-on-Si Diode Performance. Carmody, M.; Pasko, J. G.; Edwall, D.; Daraselia, M.; Almeida, L. A.; Molstad, J.; Dinan, J. H.; Markunas, J. K.; Chen, Y.; Brill, G.; Dhar, N. K. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p531 

    In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZnTe wafers. These developments have focused...

  • HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si. Johnson, S. M.; Kalisher, M. H.; Ahlgren, W. L.; James, J. B.; Cockrum, C. A. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p946 

    High quality p-on-n heterojunction infrared detectors have been fabricated using controllably doped HgCdTe grown by liquid phase epitaxy on CdZnTe/GaAs/Si alternative substrates grown by metalorganic chemical vapor deposition and used to demonstrate the first 128×128 focal plane array...

  • Electrical fluctuations and photoinduced current transients in Cd...Hg...Te long wavelength... Paul, Nichols; Van Vliet, Carolyne M. // Journal of Applied Physics;6/15/1999, Vol. 85 Issue 12, p8287 

    Studies the measurements of I-V characteristics, resistance versus T..., noise spectra and photoresponse for frequencies of 10 hertz-1 megahertz in the temperature range 300-50 K to cadmium-mercury telluride long-wavelength infrared detectors having epitaxial layers on band gap material. ...

  • Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode. Quan, Z. J.; Li, Z. F.; Hu, W. D.; Ye, Z. H.; Hu, X. N.; Lu, W. // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p084503 

    A data-processing approach has been developed to obtain device parameters from resistance-voltage (R-V) curves measured on long-wavelength HgCdTe n-on-p photodiodes. The physical model used for R-V curve fitting includes the dark current mechanisms induced by diffusion, generation recombination,...

  • In-Situ Ellipsometry Studies of Adsorption of Hg on CdTe(211)B/Si(211) and Molecular Beam Epitaxy Growth of HgCdTe(211)B. Badano, G.; Chang, Y.; Garland, J. W.; Sivananthan, S. // Journal of Electronic Materials;Jun2004, Vol. 33 Issue 6, p583 

    We study the adsorption of Hg on CdTe(211)B using an 88-wavelength spectroscopic ellipsometer mounted on a commercial, molecular beam epitaxy (MBE) chamber. A detailed analysis of the pseudo-dielectric function shows that Hg is present at the surface both in chemisorbed and physisorbed form....

  • Design and Development of Multicolor MWIR/LWIR and LWIR/VLWIR Detector Arrays. Sood, Ashok K.; Egerton, James E.; Puri, Yash R.; Bellotti, Enrico; D'Orsogna, Donald; Becker, Latika; Balcerak, Raymond; Freyvogel, Ken; Richwine, Robert // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p909 

    Multicolor infrared (IR) focal planes are required for high-performance sensor applications. These sensors will require multicolor focal plane arrays (FPAs) that will cover various wavelengths of interest in mid wavelength infrared/long wavelength infrared (MWIR/LWIR) and long wavelength...

  • Designers make incremental improvements to 2-G infrared viewers. Ames, Ben // Military & Aerospace Electronics;May2005, Vol. 16 Issue 5, p1 

    The article focuses on military users of infrared scopes that will have to wait another five or ten years to see full production of third-generation scopes. In the meantime, manufacturers are using new technology to improve today's second-generation scopes. These 2.5-generation devices offer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics