Polycrystalline silicon/CoSi[sub 2] Schottky diode with integrated SiO[sub 2] antifuse: a nonvolatile memory cell

Herner, S. B.; Mahajani, M.; Konevecki, M.; Kuang, E.; Radigan, S.; Dunton, S. V.
June 2003
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4163
Academic Journal
A Schottky diode consisting of doped polycrystalline silicon (polysilicon) and CoSi[SUB2] films is described. When an SiO[SUB2] antifuse thin film is grown in between the polysilicon and CoSi[SUB2], the film stack can function as a nonvolatile one-time programmable memory cell. The cell is programmed when the SiO[SUB2] that insulates the doped polysilicon from the CoSi[SUB2] is broken down by applying a large biasing field, and unprogrammed when the antifuse is not broken down. By taking advantage of the ability to grow SiO[SUB2] directly on CoSi[SUB2], the entire device can made with only two masking steps and relatively simple tool set, while achieving high density.


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