TITLE

Pentacene organic transistors and ring oscillators on glass and on flexible polymeric substrates

AUTHOR(S)
Klauk, Hagen; Halik, Marcus; Zschieschang, Ute; Eder, Florian; Schmid, Günter; Dehm, Christine
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4175
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated organic thin film transistors, inverters, and ring oscillators on glass and on flexible polyethylene naphthalate, using the small-molecule hydrocarbon pentacene as the semiconductor and solution-processed polyvinylphenol as the gate dielectric. Depending on the choice of substrate, the transistors have a carrier mobility between 0.3 and 0.7 cm[SUP2]/V s, an on/off current ratio between 10[SUP5] and 10[SUP6], and a subthreshold swing between 0.9 and 1.6 V/decade. To account for the positive switch-on voltage of the transistors, circuits were designed to operate with integrated level shifting. Depending on the type of substrate, ring oscillators have a signal propagation delay as low as 15 μs per stage.
ACCESSION #
9924665

 

Related Articles

  • Optimum channel thickness in pentacene-based thin-film transistors. Lee, Jiyoul; Kim, Kibum; Kim, Jae Hoon; Im, Seongil; Jung, Duk-Young // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4169 

    We report on the influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin-film transistors (TFTs) that employ the top-contact mode for the source/drain electrodes. Our pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal...

  • 1/f noise in pentacene organic thin film transistors. Necliudov, P. V.; Rumyantsev, S. L.; Shur, M. S.; Gundlach, D. J.; Jackson, T. N. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5395 

    Reports on the flicker noise in pentacene organic thin film transistors (TFT) of different designs. Effect of the TFT design on the noise level and dependence on the gate and drain-source biases; Extracted Hooge parameter alpha; Higher noise level of the bottom source and drain contacts TFT.

  • ORGANIC ELECTRONICS. Kren, Lawrence // Machine Design;05/18/2000, Vol. 72 Issue 10, p40 

    Provides information on pentacene, an organic molecule used for developing organic transistors. Semiconducting properties of the molecule; Future applications of the organic transistors.

  • Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric. Oh, Min Suk; Hwang, D. K.; Lee, Kimoon; Im, Seongil; Yi, S. // Applied Physics Letters;4/23/2007, Vol. 90 Issue 17, p173511 

    The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited AlOx dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our...

  • Potential imaging of pentacene organic thin-film transistors. Nichols, J. A.; Gundlach, D. J.; Jackson, T. N. // Applied Physics Letters;9/22/2003, Vol. 83 Issue 12, p2366 

    Scanning Kelvin probe microscopy (SKPM) has been used to simultaneously obtain high-resolution topographical and potential images of pentacene organic thin-film transistors (OTFTs) during device operation. SKPM images of OTFTs show large potential drops at the source with the magnitude dependent...

  • Field-effect transistor on pentacene single crystal. Butko, V. Y.; Chi, X.; Lang, D. V.; Ramirez, A. P. // Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4773 

    We report on the fabrication and characterization of field-effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room-temperature effective mobility (μ[sub eff]) up to 0.30 cm2/V s and on/off ratios up to 5×10[sup 6]. A negative gate voltage of...

  • Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport. Knipp, D.; Street, R. A.; Völkel, A.; Ho, J. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p347 

    The structural and transport properties of evaporated pentacene organic thin film transistors (TFTs) are reported, and they show the influence of the deposition conditions with different inorganic dielectrics. Dielectrics compatible with large area fabrication were explored to facilitate low...

  • A reduced complexity process for organic thin film transistors. Klauk, Hagen; Gundlach, David J.; Bonse, Mathias; Chung-Chen Kuo; Kuo, Chung-Chen; Jackson, Thomas N. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device...

  • Degradation of organic field-effect transistors made of pentacene. Pannemann, Ch.; Diekmann, T.; Hilleringmann, U. // Journal of Materials Research;Jul2004, Vol. 19 Issue 7, p1999 

    This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics