Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

Shen, H.; Aliberti, K.; Stann, B.; Newman, P.; Mehandru, R.; Ren, F.
June 2003
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3814
Academic Journal
We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM–PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.


Related Articles

  • Experimental study on the Er/p-InP Schottky barrier. Chen, W. X.; Yuan, M. H.; Wu, K.; Zhang, Y. X.; Wang, Z. M.; Qin, G. G. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p584 

    Provides information on a study which examined rare-earth element erbium, which was deposited onto (100) oriented Zn-doped p-type InP to form Schottky barriers. Material attractive for high-speed optoelectronic and high power microwave devices; Prerequisite essential for the development of...

  • NEWSBREAKS.  // Laser Focus World;May2001, Vol. 37 Issue 5, p11 

    Reports on the findings of research efforts in optoelectronics business as of May 2001. Possible use of existing aluminum gallium nitride Schottky-barrier photodiodes to estimate ultraviolet radiation doses to human skin; Use of solid-state films of close-packed cadmium selenide nanocrystal...

  • The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process. Woo Jeong, Shin; Back Lee, Gi; Ha, Hyeon-Jun; Kwon, Soon-Ki; Kim, Yun-Hi; Kwon Ju, Byeong // Applied Physics Letters;12/10/2012, Vol. 101 Issue 24, p243301 

    The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows...

  • Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without HO treatment. Zeng, Jian-Jhou; Lin, Yow-Jon // Applied Physics A: Materials Science & Processing;Aug2014, Vol. 116 Issue 2, p581 

    Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/ n-type Si Schottky diodes. The graphene/HO-treated SiNWs/ n-type Si Schottky diode...

  • GaN Schottky Diode with TiWElectrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer. Sheng-Po Chang // Journal of Nanomaterials;2012, p1 

    We report the fabrication of GaN Schottky photodiodes (PDs) on Si(111) substrates coated with an AlN/AlGaN buffer multilayer. It was found that their dark current was much smaller than that of identical devices prepared on sapphire substrates. With an incident wavelength of 359 nm, the maximum...

  • Research of the photo-voltaic effect in the two-base Ag-N0 AlGaAs-n+GaAs-n0 GaInAs-Au structure with various thicknesses of a base. Yodgorova, D. M.; Karimov, A. V.; Giyasova, F. A.; Karimova, D. A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 1, p75 

    The results of research of photoelectric phenomena in the two-base Ag- N°AlGaAs-n+GaAs-n°GaInAs-Au structure are presented. The photo-voltaic effect observable in a wide range of the spectrum (0.4-2 μm) is explained by different signs of the photo EMF created by the separation of...

  • Fabrication of ZnO nanorods by simplified spray pyrolysis. Aydin, Serdar; Turgut, Güven; Yilmaz, Mehmet; Ertuğrul, Mehmet // Bitlis Eren University Journal of Science & Technology;2011, Issue 1-3, p1 

    ZnO layers were deposited by a simple and cost-effective spray pyrolysis using zinc chloride aqueous solutions on glass substrates at 600 °C. The structural properties of nanorods were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). XRD studies showed that the...

  • Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO. Lajn, A.; Schmidt, M.; Wenckstern, H.; Grundmann, M. // Journal of Electronic Materials;Apr2011, Vol. 40 Issue 4, p473 

    The authors report on the fabrication of transparent rectifying contacts by reactive sputtering of silver or platinum on heteroepitaxially grown zinc oxide. The contacts exhibit Schottky-like current-voltage behavior; the effective barrier height is $$0.73\,\hbox{eV}$$ for both materials. In...

  • Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier. Yakuphanoglu, F.; Shah, M.; Aslam Farooq, W. // Acta Physica Polonica, A.;Sep2011, Vol. 120 Issue 3, p558 

    The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics