TITLE

Mixing characteristics of InGaAs metal–semiconductor–metal photodetectors with Schottky enhancement layers

AUTHOR(S)
Shen, H.; Aliberti, K.; Stann, B.; Newman, P.; Mehandru, R.; Ren, F.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3814
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM–PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.
ACCESSION #
9885239

 

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