Epitaxial (100) iridium on A-plane sapphire: A system for wafer-scale diamond heteroepitaxy

Dai, Z.; Bednarski-Meinke, C.; Loloee, R.; Golding, B.
June 2003
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3847
Academic Journal
Large-scale heteroepitaxial growth of diamond depends critically on the development of a suitable lattice-matched buffer layer and substrate system. Epitaxial (100) iridium films have been grown on terraced, vicinal a-plane (1120) α-Al[sub 2]O[sub 3] (sapphire) by electron-beam evaporation. The epitaxial relationship, Ir(100)//Al[sub 2]O[sub 3](1120) with Ir[011]//Al[sub 2]O[sub 3][1100], was determined by x-ray diffraction and electron backscattering diffraction analysis. For a 300-nm thickness of Ir, a (200) rocking curve yielded a linewidth of 0.21°, and the film exhibited a macrostepped surface with low pinhole density. This Ir/sapphire system provides a basis for large-area growth of (100) heteroepitaxial diamond. © 2003 American Institute of Physics.


Related Articles

  • Crystal tilting of diamond heteroepitaxially grown on vicinal Ir/SrTiO3(001). Gsell, S.; Schreck, M.; Stritzker, B. // Journal of Applied Physics;8/1/2004, Vol. 96 Issue 3, p1413 

    In the present study SrTiO3 crystals with vicinal (001) surfaces inclined 3° and 5° towards [110] and [100], respectively, have been used to deposit iridium layers and subsequently epitaxial diamond films. The iridium grows on top of the vicinal SrTiO3(001) with a perfect cube-on-cube...

  • Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region. Vasil�ev, V. I.; Deryagin, A. G.; Kuchinskii, V. I.; Smirnov, V. M.; Sokolovskii, G. S.; Tret�yakov, D. N.; Faleev, N. N. // Technical Physics Letters;Mar98, Vol. 24 Issue 3, p231 

    The growth of epitaxial layers of GaSb lattice-matched Ga[sub 1 - x]In[sub x]As[sub y]Sb[sub 1 - y] solid solutions by liquid-phase epitaxy from Sb-enriched liquid phases within the spinodal decay region is reported. The highest value of the composition (x = 0.4) was achieved for growth on a...

  • Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning. Carter-Coman, Carrie; Brown, April S.; Bicknell-Tassius, Robert; Jokerst, Nan Marie; Allen, Mark // Applied Physics Letters;7/8/1996, Vol. 69 Issue 2, p257 

    Thin compliant growth substrates have been used to reduce the strain in lattice-mismatched overlayers during epitaxial growth. This letter reports a new thin compliant substrate technology which allows these thin substrates to be patterned on the bottom, bonded surface. This lateral strain...

  • New approach to the high quality epitaxial growth of lattice-mismatched materials. Luryi, Serge; Suhir, Ephraim // Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p140 

    We have reconsidered the problem of the critical layer thickness hc for growth of strained heterolayers on lattice-mismatched substrates, using a new approach which allows us to determine the spatial distribution of stresses in a bi-material assembly and include the effects of a finite size of...

  • Erratum: "Effects of selective lattice deformation on YbBa2Cu4O8 and YBa2Cu3O7 epitaxial films" [Appl. Phys. Lett. 104, 102601 (2014)]. Mito, M.; Matsui, H.; Imakyurei, T.; Deguchi, H.; Horide, T.; Matsumoto, K.; Ichinose, A.; Yoshida, Y. // Applied Physics Letters;5/12/2014, Vol. 104 Issue 19, p1 

    A correction to the article ""Effects of selective lattice deformation on YbBa2Cu4O8 and YBa2Cu3O7 epitaxial films" that was published in the May 2014 issue of the journal is presented.

  • Random walks with nearest neighbors prohibited on the diamond lattice.  // Journal of Chemical Physics;8/15/1999, Vol. 111 Issue 7, p3311 

    Reports on numerical studies of random walk with nearest neighbors prohibited (RWNNP) on the diamond lattice, with substantially extended lengths of generated walks. Use of computer simulations to find the scaling exponents for short and long walks on the diamond lattice; Set of vectors that...

  • Diamond/Ir/SrTiO[sub 3]: A material combination for improved heteroepitaxial diamond films. Schreck, M.; Roll, H.; Stritzker, B. // Applied Physics Letters;2/1/1999, Vol. 74 Issue 5, p650 

    Reports on the deposition of epitaxial iridium layers on mechanically polished SrTiO[sub 3](001) surfaces. Nucleation densities of epitaxial diamond grains; Polar and azimuthal alignment for the crystal orientation of a 6 nanometer diamond film; Bond strength between diamond and iridium interfaces.

  • Comparative Raman studies of cubic and hexagonal GaN epitaxial layers. Tabata, A.; Enderlein, R.; Leite, J. R.; da Silva, S. W.; Galzerani, J. C.; Schikora, D.; Kloidt, M.; Lischka, K. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4137 

    Focuses on a study which performed comparative Raman measurements of gallium and nitrogen epitaxial layers. Observation on the hexagonal and cubic layers of gallium and nitrogen; Discussion of the hexagonal frequencies of gallium; Lattice dynamics of zincblende and wurtzite crystals.

  • Lattice location of heavily doped As atoms in Si films grown by partially ionized molecular beam epitaxy. Sugiyama, Tetsuya; Itoh, Tadatsugu // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p883 

    Lattice location of heavily doped As atoms in Si epitaxial films grown by partially ionized molecular beam epitaxy was investigated. It was revealed from carrier concentration measurements and Rutherford backscattering studies that the electrical activity was smaller than the fraction of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics