TITLE

Strain partition of Si/SiGe and SiO[sub 2]/SiGe on compliant substrates

AUTHOR(S)
Yin, H.; Hobart, K. D.; Kub, F. J.; Shieh, S. R.; Duffy, T. S.; Sturm, J. C.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3853
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strain partitioning of crystalline Si and amorphous SiO[sub 2] deposited on crystalline SiGe on a compliant viscous borophosphorosilicate (BPSG) glass has been observed. Pseudomorphic epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding and the Smart-cut® process. The strains in SiGe and Si films were found to change identically during a high-temperature anneal which softened the BPSG film, indicating a coherent interface between SiGe and Si films and precluding slippage or the formation of misfit dislocations along the interface. The stress balance between the layers dictated the final state, which confirmed that BPSG was a perfectly compliant substrate and did not exert any force on the layers above it. Similar results were found for amorphous SiO[sub 2] deposited on SiGe on BPSG and then annealed. This shows that the viscous BPSG is an effective compliant substrate for the strain engineering of elastic films without the introduction of dislocations. © 2003 American Institute of Physics.
ACCESSION #
9885221

 

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