TITLE

Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO[sub 2]

AUTHOR(S)
Franzò, G.; Boninelli, S.; Pacifici, D.; Priolo, F.; Iacona, F.; Bongiorno, C.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3871
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, the role of amorphous Si clusters in the excitation of Er implanted in substoichiometric SiO[sub x] films will be elucidated. It will be shown that the temperature of the SiO[sub x] thermal process prior to Er implantation is crucial in determining the luminescence properties of the samples. In particular, the luminescence intensity at 1.54 μm is almost constant for SiO[sub x] samples not annealed or pre-annealed at temperatures lower than 800 °C, reaches the maximum at 800 °C, and decreases at higher temperatures. The structural properties of these samples have been studied by energy filtered transmission electron microscopy. It will be shown that for annealing temperatures lower than 1000 °C, only amorphous Si nanoclusters are present. We demonstrate that a large density of small amorphous Si clusters produces the best luminescence performance and enhances the fraction of optically active Er. © 2003 American Institute of Physics.
ACCESSION #
9885215

 

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